圖片僅供參考
SI7960DP-T1-E3
+物料清單MOSFET 2N-CH 60V 6.2A PPAK SO-8
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製造商矽尼克斯
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製造商部分 #SI7960DP-T1-E3
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有存貨6575
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 6.2A |
| RdsOn(Max)@IdVgs | 21mOhm @ 9.7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 75nC @ 10V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
