圖片僅供參考
SI7900AEDN-T1-GE3
+物料清單MOSFET 2N-CH 20V 6A PPAK 1212-8
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製造商矽尼克斯
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製造商部分 #SI7900AEDN-T1-GE3
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6A |
| Rds On(Max) @ Id Vgs | 26mOhm @ 8.5A, 4.5V |
| Vgs(th)(Max) @ Id | 900mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16nC @ 4.5V |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
