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SI7613DN-T1-GE3
+物料清單MOSFET P-CH 20V 35A PPAK1212-8
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製造商矽尼克斯
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製造商部分 #SI7613DN-T1-GE3
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 8.7mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 87 nC @ 10 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 2620 pF @ 10 V |
| PowerDissipation(Max) | 3.8W (Ta), 52.1W (Tc) |
| OperatingTemperature | -50°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
概述
Description
The SI7613DN-T1-GE3 is a MOSFET transistor manufactured by Vishay Intertechnology. It is part of their PowerPAK® SO-8 series, designed to handle various power management applications. This specific component is notable for its low on-resistance and high efficiency, making it suitable for DC-DC converters, load switches, and motor drive circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 20A, which allow it to handle significant power loads while maintaining efficient operation. Its PowerPAK SO-8 package provides excellent thermal performance, ensuring reliable operation even in high-power environments.
The SI7613DN-T1-GE3 is designed to be easy to integrate into existing systems, thanks to its standard pin configuration and compact footprint. Its low gate charge and fast switching speeds contribute to reduced power loss and improved overall efficiency. This MOSFET is commonly used in applications that demand compact size and high current handling capabilities, such as consumer electronics, industrial equipment, and automotive systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 20A, which allow it to handle significant power loads while maintaining efficient operation. Its PowerPAK SO-8 package provides excellent thermal performance, ensuring reliable operation even in high-power environments.
The SI7613DN-T1-GE3 is designed to be easy to integrate into existing systems, thanks to its standard pin configuration and compact footprint. Its low gate charge and fast switching speeds contribute to reduced power loss and improved overall efficiency. This MOSFET is commonly used in applications that demand compact size and high current handling capabilities, such as consumer electronics, industrial equipment, and automotive systems.
Equivalent
The SI7613DN-T1-GE3 is a power MOSFET from Vishay. Equivalent products might include similar N-channel MOSFETs like the IRF540N from Infineon, the FQP30N06L from ON Semiconductor, and the NTMS5830NR2 from ON Semiconductor. When selecting an equivalent, ensure that the voltage, current, Rds(on), and package specifications match the original closely for compatibility. Always verify the detailed specifications from datasheets to ensure proper substitution.
Features
The SI7613DN-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance: The device exhibits low on-resistance, which ensures minimal power loss and improved efficiency in power conversion applications.
2. High Current Capability: It supports a high continuous drain current, making it suitable for applications requiring substantial power handling.
3. Compact Package: The MOSFET comes in a PowerPAK® SO-8 package, which provides excellent thermal performance while conserving board space.
4. Fast Switching: The device is designed for fast switching speeds, which enhances performance in high-frequency applications.
5. Enhanced Thermal Characteristics: It has superior thermal characteristics for effective heat dissipation, which helps in maintaining reliability under high-power conditions.
6. Low Gate Charge: This feature contributes to reduced power consumption and increased efficiency in various circuits.
These features make the SI7613DN-T1-GE3 suitable for applications like DC-DC converters, load switching, and motor drives.
1. Low On-Resistance: The device exhibits low on-resistance, which ensures minimal power loss and improved efficiency in power conversion applications.
2. High Current Capability: It supports a high continuous drain current, making it suitable for applications requiring substantial power handling.
3. Compact Package: The MOSFET comes in a PowerPAK® SO-8 package, which provides excellent thermal performance while conserving board space.
4. Fast Switching: The device is designed for fast switching speeds, which enhances performance in high-frequency applications.
5. Enhanced Thermal Characteristics: It has superior thermal characteristics for effective heat dissipation, which helps in maintaining reliability under high-power conditions.
6. Low Gate Charge: This feature contributes to reduced power consumption and increased efficiency in various circuits.
These features make the SI7613DN-T1-GE3 suitable for applications like DC-DC converters, load switching, and motor drives.
Pinout
The SI7613DN-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is commonly used for power management applications. The MOSFET comes in a PowerPAK SO-8 package and has a total of 8 pins. The main functions of these pins are:
1. Drain (D): The drain is the terminal where the main current flows out of the MOSFET. Several pins in the package are typically connected to the drain to handle high current.
2. Source (S): The source is the terminal where the current enters the MOSFET. Multiple pins might be allocated to the source as well.
3. Gate (G): The gate is the terminal used to control the flow of current between the drain and source. It usually has a separate pin.
The specific configuration of the pins (which pins are assigned to drain, source, and gate) can be found in the manufacturer's datasheet. This configuration helps in efficient heat dissipation and current handling in electronic circuits.
1. Drain (D): The drain is the terminal where the main current flows out of the MOSFET. Several pins in the package are typically connected to the drain to handle high current.
2. Source (S): The source is the terminal where the current enters the MOSFET. Multiple pins might be allocated to the source as well.
3. Gate (G): The gate is the terminal used to control the flow of current between the drain and source. It usually has a separate pin.
The specific configuration of the pins (which pins are assigned to drain, source, and gate) can be found in the manufacturer's datasheet. This configuration helps in efficient heat dissipation and current handling in electronic circuits.
Manufacturer
The SI7613DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer known for producing discrete semiconductors and passive electronic components. Founded in 1962, the company has established itself as a key player in the electronics industry, providing components essential for various applications including automotive, industrial, consumer electronics, computing, telecommunications, and medical sectors. Vishay's product offerings include diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. They are recognized for their focus on innovation, quality, and reliability, making them a significant supplier to companies around the world.
Application
The SI7613DN-T1-GE3 is a N-channel MOSFET commonly used in a variety of applications due to its low on-resistance and high current capacity. Common application areas include power management systems, DC-DC converters, load switches, and motor control circuits. It is also used in consumer electronics, industrial equipment, and automotive systems for efficient power delivery and switching. Its compact packaging and performance make it suitable for space-constrained designs that require reliable and efficient power handling.
Package
The SI7613DN-T1-GE3 is a PowerPAK® SO-8 package type, which is commonly used for power MOSFETs. This package offers a small footprint with enhanced thermal performance, making it suitable for applications requiring efficient heat dissipation.
