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SI7489DP-T1-GE3
+物料清單MOSFET P-CH 100V 28A PPAK SO-8
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製造商矽尼克斯
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製造商部分 #SI7489DP-T1-GE3
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規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4600 pF @ 50 V |
| PowerDissipation(Max) | 5.2W (Ta), 83W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
概述
Description
The SI7489DP-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like load switching, DC-DC conversion, and battery protection.
### Key Features:
- Voltage Rating: -30V (P-channel)
- Current Rating: -11A (continuous)
- Low On-Resistance (RDS(on)): 23mΩ (max at VGS = -10V)
- Low Gate Charge (Qg): 18nC (typical)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
### Applications:
- Power distribution in portable devices
- Battery management systems
- Motor control and load switches
This MOSFET is ideal for space-constrained, high-performance designs, offering low power loss and robust thermal performance.
### Key Features:
- Voltage Rating: -30V (P-channel)
- Current Rating: -11A (continuous)
- Low On-Resistance (RDS(on)): 23mΩ (max at VGS = -10V)
- Low Gate Charge (Qg): 18nC (typical)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
### Applications:
- Power distribution in portable devices
- Battery management systems
- Motor control and load switches
This MOSFET is ideal for space-constrained, high-performance designs, offering low power loss and robust thermal performance.
Features
The SI7489DP-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V drain-to-source (VDS).
- Current Rating: -12A continuous drain current (ID).
- Low On-Resistance: 28mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) and output capacitance (Coss).
- Package: PowerPAK® SO-8 for efficient thermal performance.
- Applications: Power management, load switching, and battery protection.
Designed for high efficiency in compact designs.
- Voltage Rating: -30V drain-to-source (VDS).
- Current Rating: -12A continuous drain current (ID).
- Low On-Resistance: 28mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) and output capacitance (Coss).
- Package: PowerPAK® SO-8 for efficient thermal performance.
- Applications: Power management, load switching, and battery protection.
Designed for high efficiency in compact designs.
Pinout
The SI7489DP-T1-GE3 is a PowerPAK SO-8 dual N-channel MOSFET with 8 pins.
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (typically 20A per channel).
- Logic-level gate drive (compatible with 3.3V/5V control signals).
- Common drain configuration (pins 1-3: Gate1, Source1, Drain1; pins 6-8: Gate2, Source2, Drain2).
Applications:
- Power management in DC-DC converters, motor control, and load switching.
Pinout (simplified):
1. Gate1
2. Source1
3. Drain1 (shared)
4. NC (No Connection)
5. NC (No Connection)
6. Gate2
7. Source2
8. Drain2 (shared)
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (typically 20A per channel).
- Logic-level gate drive (compatible with 3.3V/5V control signals).
- Common drain configuration (pins 1-3: Gate1, Source1, Drain1; pins 6-8: Gate2, Source2, Drain2).
Applications:
- Power management in DC-DC converters, motor control, and load switching.
Pinout (simplified):
1. Gate1
2. Source1
3. Drain1 (shared)
4. NC (No Connection)
5. NC (No Connection)
6. Gate2
7. Source2
8. Drain2 (shared)
Application
The SI7489DP-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Automotive Systems – Power distribution, motor control, and infotainment.
4. Consumer Electronics – Power switching in smartphones, tablets, and laptops.
5. Industrial Applications – Control circuits, relay drivers, and energy-efficient systems.
Its low on-resistance and high efficiency make it ideal for compact, high-performance designs.
1. Power Management – Voltage regulation, load switching in DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Automotive Systems – Power distribution, motor control, and infotainment.
4. Consumer Electronics – Power switching in smartphones, tablets, and laptops.
5. Industrial Applications – Control circuits, relay drivers, and energy-efficient systems.
Its low on-resistance and high efficiency make it ideal for compact, high-performance designs.
Package
The SI7489DP-T1-GE3 is a PowerPAK® SO-8 dual flat no-lead (DFN) package. It features a compact, surface-mount design with exposed pads for enhanced thermal performance, making it suitable for high-efficiency power applications. The package dimensions are typically 5mm x 6mm.
