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SI7415DN-T1-E3
+物料清單MOSFET P-CH 60V 3.6A PPAK1212-8
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製造商矽尼克斯
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製造商部分 #SI7415DN-T1-E3
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規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 3.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 5.7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
概述
Description
The SI7415DN-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -11A (continuous drain current)
- Low On-Resistance (RDS(on)): 18mΩ (max at VGS = -10V)
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Compact Package: PowerPAK® SO-8 (optimized for space efficiency)
Ideal for load switching, DC-DC conversion, and battery protection in portable electronics, power supplies, and automotive systems. Its low RDS(on) ensures minimal power loss, while the fast switching capability enhances efficiency.
For detailed specs, refer to the datasheet from Vishay.
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -11A (continuous drain current)
- Low On-Resistance (RDS(on)): 18mΩ (max at VGS = -10V)
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Compact Package: PowerPAK® SO-8 (optimized for space efficiency)
Ideal for load switching, DC-DC conversion, and battery protection in portable electronics, power supplies, and automotive systems. Its low RDS(on) ensures minimal power loss, while the fast switching capability enhances efficiency.
For detailed specs, refer to the datasheet from Vishay.
Features
The SI7415DN-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -12A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed
- AEC-Q101 Qualified (Automotive Grade)
- Package: PowerPAK® SO-8 (Compact, efficient thermal performance)
- Applications: Power management, load switching, automotive systems
This MOSFET is optimized for high efficiency and reliability in demanding environments.
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -12A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed
- AEC-Q101 Qualified (Automotive Grade)
- Package: PowerPAK® SO-8 (Compact, efficient thermal performance)
- Applications: Power management, load switching, automotive systems
This MOSFET is optimized for high efficiency and reliability in demanding environments.
Pinout
The SI7415DN-T1-E3 is a P-channel MOSFET in a PowerPAK SO-8 package with 8 pins.
Key Functions:
- Pins 1, 2, 3 (Source - S): Connected to the source terminal.
- Pin 4 (Gate - G): Controls the MOSFET switching.
- Pins 5, 6, 7, 8 (Drain - D): Combined for high current handling.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in power management, load switching, and DC-DC conversion.
Key Functions:
- Pins 1, 2, 3 (Source - S): Connected to the source terminal.
- Pin 4 (Gate - G): Controls the MOSFET switching.
- Pins 5, 6, 7, 8 (Drain - D): Combined for high current handling.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in power management, load switching, and DC-DC conversion.
