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SI7157DP-T1-GE3
+物料清單MOSFET P-CH 20V 60A PPAK SO-8
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製造商矽尼克斯
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製造商部分 #SI7157DP-T1-GE3
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規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 10V |
| RdsOn(Max)@IdVgs | 1.6mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 1.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 625 nC @ 10 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 22000 pF @ 10 V |
| PowerDissipation(Max) | 6.25W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
概述
Description
The SI7157DP-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V), ensuring efficient power switching.
- Compact Package: PowerPAK® SO-8, suitable for space-constrained designs.
- Fast Switching: Optimized for high-efficiency DC-DC converters, load switches, and battery management.
Ideal for automotive, industrial, and consumer electronics, it offers low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V), ensuring efficient power switching.
- Compact Package: PowerPAK® SO-8, suitable for space-constrained designs.
- Fast Switching: Optimized for high-efficiency DC-DC converters, load switches, and battery management.
Ideal for automotive, industrial, and consumer electronics, it offers low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.
Pinout
The SI7157DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low on-resistance (RDS(on)) for reduced power loss.
- Common features: Logic-level gate drive, fast switching, and thermal protection.
Pins typically include dual source, gate, and drain connections (consult datasheet for exact pinout).
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low on-resistance (RDS(on)) for reduced power loss.
- Common features: Logic-level gate drive, fast switching, and thermal protection.
Pins typically include dual source, gate, and drain connections (consult datasheet for exact pinout).
Package
The SI7157DP-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features low thermal resistance and efficient heat dissipation, making it suitable for power management in space-constrained designs. The package dimensions are typically 4.9mm x 3.9mm x 1.75mm.
