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SI7155DP-T1-GE3
+物料清單MOSFET P-CH 40V 31A/100A PPAK
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製造商矽尼克斯
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製造商部分 #SI7155DP-T1-GE3
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有存貨3909
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規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® Gen III |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 31A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.6mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 330 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12900 pF @ 20 V |
| PowerDissipation(Max) | 6.25W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
概述
Description
The MOSFET is housed in a compact PowerPAK SO-8 package, which offers enhanced thermal performance and efficient heat dissipation. This helps in maintaining reliability and performance even in demanding conditions. It is typically used in environments that require robust power handling capabilities.
The SI7155DP-T1-GE3 is part of Vishay’s product line focused on providing solutions for energy-efficient power electronics. It aligns with industry standards to ensure compatibility and performance across different platforms and applications. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
1. Infineon: BSC042N03LS5
2. ON Semiconductor: NTMFS4935NT1G
3. STMicroelectronics: STL120N3LLH6
These equivalents should match or closely align with the SI7155DP-T1-GE3 in terms of voltage, current, and package specifications. Always verify the datasheets for compatibility in your specific application.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) capacity depending on its operating conditions.
2. Low On-Resistance: This MOSFET offers low R_DS(on) values, which contributes to higher efficiency by minimizing power losses during operation.
3. Package Type: It is available in a PowerPAK® SO-8 package, which allows for efficient thermal performance and space-saving on printed circuit boards (PCBs).
4. Temperature Range: It is designed to operate efficiently over a wide temperature range, making it suitable for various environmental conditions.
5. Applications: The SI7155DP-T1-GE3 is typically used in applications such as load switching, battery protection, and DC-DC conversion.
6. Enhanced Performance: It offers fast switching speeds which improve efficiency and performance in high-frequency applications.
These features make the SI7155DP-T1-GE3 suitable for a variety of power management roles in electronic devices.
Pinout
The primary function of the SI7155DP-T1-GE3 is to serve as a switching element in electronic circuits, facilitating control of power delivery to various components. It is commonly used in synchronous buck converters, load switches, and other power management applications.
The 8 pins are generally allocated as follows: pins for the gate (G), drain (D), and source (S) connections, with multiple pins often used in parallel for drain and source to handle higher current. Exact pin configuration should be confirmed from the datasheet to understand specific connections and thermal characteristics.
For precise pin assignments and electrical characteristics, refer to the official datasheet provided by the manufacturer.
Manufacturer
Application
1. DC-DC Converters: Used in voltage regulation and power supply designs.
2. Motor Drives: For controlling and powering motors in various devices.
3. Battery Management: Utilized in battery charging and protection circuits.
4. Telecommunications: In power amplifiers and RF applications.
5. Automotive Electronics: For electric and hybrid vehicle power systems.
6. Industrial Equipment: Used in power tools and automation systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.