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SI5509DC-T1-E3
+物料清單MOSFET N/P-CH 20V 6.1A 1206-8
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製造商矽尼克斯
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製造商部分 #SI5509DC-T1-E3
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 6.1A, 4.8A |
| RdsOn(Max)@IdVgs | 52mOhm @ 5A, 4.5V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6.6nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 455pF @ 10V |
| Power-Max | 4.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SMD, Flat Lead |
