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SI4463CDY-T1-GE3
+物料清單MOSFET P-CH 20V 13.6A/49A 8SO
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製造商矽尼克斯
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製造商部分 #SI4463CDY-T1-GE3
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規格
| 屬性 | 價值 |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SI4463 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta), 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 15 V |
| Power Dissipation (Max) | 2.7W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
