SI4447DY-T1-GE3

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SI4447DY-T1-GE3

+物料清單

MOSFET P-CH 40V 3.3A 8SO

  • 製造商矽尼克斯

  • 製造商部分 #SI4447DY-T1-GE3

  • 有存貨8342

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正品保證

規格

屬性 價值
Series TrenchFET®
Part Status Obsolete
Base Product Number SI4447
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 805 pF @ 20 V
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Packaging Cut Tape (CT), Tape & Reel (TR)

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