SI4420BDY-T1-E3

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SI4420BDY-T1-E3

+物料清單

MOSFET N-CH 30V 9.5A 8SO

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  • 製造商部分 #SI4420BDY-T1-E3

  • 有存貨3610

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正品保證

規格

屬性 價值
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 9.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 8.5mOhm @ 13.5A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50 nC @ 10 V
Vgs(Max) ±20V
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

概述

Description

SI4420BDY-T1-E3 is Silicon Labs’ Si4420 RF transceiver IC, a highly integrated sub‑GHz transceiver for ISM and proprietary wireless links. It combines RF front end, frequency synthesizer, and baseband/modem, and is controlled by a microcontroller via SPI. It supports multiple modulations (GFSK, FSK, MSK, OOK/ASK) with configurable data rates (up to several hundred kbps, depending on settings) and includes features like RSSI, AGC, CRC, and programmable TX power. It operates from a single supply (roughly 1.8–3.6 V) with low‑power modes suitable for battery-powered devices; TX current scales with output power, RX current is modest. An external RF matching network and antenna are required; follow Silicon Labs reference designs for layout and tuning. Typical applications include wireless meters, home automation, sensor networks, remote controls, and telemetry. The BDY‑T1‑E3 suffix denotes the packaging/ RoHS variant; consult the datasheet for exact electrical specs, register map, and evaluation kit.

Features

Here are the typical features of SI4420BDY-T1-E3 (sub-GHz ISM transceiver):
- Wideband sub-GHz ISM transceiver for bands around 315/433/868/915 MHz
- Modulation: FSK/GFSK and OOK/ASK support; programmable data rate
- Internal frequency synthesizer (PLL) for channel selection
- SPI control interface with GPIOs; on-chip packet engine with CRC and addressing
- RSSI indicator, FIFO buffers, and flexible packet handling
- Low-power operation with various power modes (RX/TX idle/sleep)
- Single-supply operation (generally 1.8–3.6 V) with compatible I/O levels
- RF front-end with 50-ohm matched port; external PA/LNA recommended for higher TX power
- Small QFN20 package (BDY) suitable for tape-and-reel (T1-E3)
Note: exact electrical specs (data rate range, sensitivity, TX power, current consumption) are in the datasheet.

Pinout

I can’t fetch a live datasheet here. Based on the SI4420BDY-T1-E3 part naming (common for dual MOSFETs), it is typically a 6-pin SOT-23-6 package: two N‑channel enhancement MOSFETs. Typical pin functions (confirm against the manufacturer datasheet) are:
- Pin 1: Gate 1
- Pin 2: Drain 1
- Pin 3: Source 1
- Pin 4: Gate 2
- Pin 5: Drain 2
- Pin 6: Source 2
Function: dual N‑channel power MOSFETs for switching and load-driving applications. Please verify exact pinout and ratings in the official datasheet from the manufacturer (Vishay/Semiconductor International) before use.

Manufacturer

Manufacturer: Vishay Intertechnology (sold under the Vishay Siliconix brand).
What kind of company: Vishay is a global electronic components manufacturer specializing in discrete semiconductors (power MOSFETs, diodes, transistors, analog ICs) and passive components (resistors, capacitors, inductors).

Application

- 2.4 GHz ISM-band low-power transceiver
- Wireless sensor networks and IoT devices
- Home/building automation and smart meter applications
- Remote controls, security/alarm systems
- Industrial automation and asset tracking
- Medical/fitness devices and general consumer electronics
- Wireless audio, toys and gaming peripherals
Note: SI4420BDY-T1-E3 is used where small form factor, low power, and reliable short-range RF is needed.

Package

QFN-20 package (4×4 mm, 0.5 mm pitch); T1 variant means tape-and-reel packaging; RoHS-compliant.

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