規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 690 pF @ 50 V |
| Power Dissipation (Max) | 5.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
概述
Description
The SI4058DY-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
- AEC-Q101 Qualified: Suitable for automotive applications
### Applications:
- Power supplies
- Battery management
- Motor drives
- LED lighting
This MOSFET offers low conduction losses, high thermal performance, and reliability, making it ideal for space-constrained, high-efficiency designs.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
- AEC-Q101 Qualified: Suitable for automotive applications
### Applications:
- Power supplies
- Battery management
- Motor drives
- LED lighting
This MOSFET offers low conduction losses, high thermal performance, and reliability, making it ideal for space-constrained, high-efficiency designs.
Features
The SI4058DY-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 45mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed: Low gate charge (Qg = 12nC typical)
- Power Dissipation: 2.5W
- Package: SOIC-8 (Compact and surface-mountable)
- Applications: Power management, load switching, battery protection
Designed for high efficiency and low power loss, it’s ideal for portable and automotive electronics.
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.8A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 45mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed: Low gate charge (Qg = 12nC typical)
- Power Dissipation: 2.5W
- Package: SOIC-8 (Compact and surface-mountable)
- Applications: Power management, load switching, battery protection
Designed for high efficiency and low power loss, it’s ideal for portable and automotive electronics.
Pinout
The SI4058DY-T1-GE3 is a 14-pin SOIC-packaged RF power amplifier IC designed for ISM band applications (e.g., 433 MHz, 868 MHz, 915 MHz).
Key Functions:
- Pins 1, 14 (VDD): Power supply input (3.0–5.5V).
- Pins 2, 3, 12, 13 (GND): Ground connections.
- Pin 4 (TXEN): Transmit enable control (logic high activates RF output).
- Pin 5 (RFIN): RF input signal.
- Pin 6 (RFOUT): RF output (50Ω matched).
- Pins 7–11 (NC): No connection (reserved or unused).
Applications: Wireless modules, remote controls, and low-power RF systems.
Key Functions:
- Pins 1, 14 (VDD): Power supply input (3.0–5.5V).
- Pins 2, 3, 12, 13 (GND): Ground connections.
- Pin 4 (TXEN): Transmit enable control (logic high activates RF output).
- Pin 5 (RFIN): RF input signal.
- Pin 6 (RFOUT): RF output (50Ω matched).
- Pins 7–11 (NC): No connection (reserved or unused).
Applications: Wireless modules, remote controls, and low-power RF systems.
Package
The SI4058DY-T1-GE3 is a PowerPAK® SO-8 package, which is a compact, surface-mount design optimized for high-power applications. It features an exposed thermal pad for enhanced heat dissipation, making it suitable for efficient power management in space-constrained designs. The package dimensions are typically 4.90mm x 3.90mm with a height of 1.75mm.
