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SI2325DS-T1-E3
+物料清單MOSFET P-CH 150V 530MA SOT23-3
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製造商矽尼克斯
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製造商部分 #SI2325DS-T1-E3
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有存貨17525
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 530mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 750mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
概述
Description
The SI2325DS-T1-E3 is a surface-mount, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications. It is known for its efficiency and compact packaging, typically used in situations requiring power management and switching solutions. The device is part of the SI series and is manufactured by Vishay Siliconix.
Key features of the SI2325DS-T1-E3 include:
1. Compact SOT-23 Package: Ideal for space-constrained applications.
2. Low On-Resistance: Offers high efficiency by minimizing power dissipation.
3. Fast Switching Speed: Enhances performance in switching applications.
4. Low Threshold Voltage: Suitable for low voltage applications.
5. Applications: Common in DC-DC converters, load switches, and battery-powered devices.
The SI2325DS-T1-E3 is valued in electronics for its reliability and robust performance in managing power efficiently across a range of devices, making it a popular choice among engineers and designers.
Key features of the SI2325DS-T1-E3 include:
1. Compact SOT-23 Package: Ideal for space-constrained applications.
2. Low On-Resistance: Offers high efficiency by minimizing power dissipation.
3. Fast Switching Speed: Enhances performance in switching applications.
4. Low Threshold Voltage: Suitable for low voltage applications.
5. Applications: Common in DC-DC converters, load switches, and battery-powered devices.
The SI2325DS-T1-E3 is valued in electronics for its reliability and robust performance in managing power efficiently across a range of devices, making it a popular choice among engineers and designers.
Equivalent
The SI2325DS-T1-E3 is a P-channel MOSFET. Equivalent products include:
1. FDS6679AZ - Fairchild/ON Semiconductor
2. BSL206PE - Infineon
3. FDMA1027PZ - ON Semiconductor
4. IRLML2244TRPBF - Infineon
These alternatives have similar specifications, such as voltage and current ratings, making them suitable replacements in most applications. Always verify compatibility with your specific design requirements before substitution.
1. FDS6679AZ - Fairchild/ON Semiconductor
2. BSL206PE - Infineon
3. FDMA1027PZ - ON Semiconductor
4. IRLML2244TRPBF - Infineon
These alternatives have similar specifications, such as voltage and current ratings, making them suitable replacements in most applications. Always verify compatibility with your specific design requirements before substitution.
Features
The SI2325DS-T1-E3 is a P-channel MOSFET known for its efficiency and compact design, ideal for power management applications. Key features include:
1. Voltage and Current Ratings: It operates with a drain-source voltage of -20V and a continuous drain current of -3.4A, suitable for low to medium power applications.
2. Low On-Resistance: The MOSFET exhibits a low on-resistance of 85mΩ at -4.5V gate-source voltage, minimizing power loss and enhancing performance efficiency.
3. Threshold Voltage: It has a gate threshold voltage range of -0.4V to -1.0V, allowing it to operate effectively at low voltages.
4. Package Size: The device is available in a compact SOT-23 package, making it ideal for space-constrained applications.
5. Thermal Performance: It is designed to handle high power dissipation with a maximum junction temperature of 150°C, ensuring reliability under varying thermal conditions.
6. Applications: Typical uses include load switching, battery management, and power conversion in portable electronics and other consumer devices.
These features make the SI2325DS-T1-E3 a versatile choice for efficient power management in various electronic applications.
1. Voltage and Current Ratings: It operates with a drain-source voltage of -20V and a continuous drain current of -3.4A, suitable for low to medium power applications.
2. Low On-Resistance: The MOSFET exhibits a low on-resistance of 85mΩ at -4.5V gate-source voltage, minimizing power loss and enhancing performance efficiency.
3. Threshold Voltage: It has a gate threshold voltage range of -0.4V to -1.0V, allowing it to operate effectively at low voltages.
4. Package Size: The device is available in a compact SOT-23 package, making it ideal for space-constrained applications.
5. Thermal Performance: It is designed to handle high power dissipation with a maximum junction temperature of 150°C, ensuring reliability under varying thermal conditions.
6. Applications: Typical uses include load switching, battery management, and power conversion in portable electronics and other consumer devices.
These features make the SI2325DS-T1-E3 a versatile choice for efficient power management in various electronic applications.
Pinout
The SI2325DS-T1-E3 is a P-channel MOSFET primarily used for load switching and power management applications. It is produced by Vishay Siliconix. The MOSFET comes in a SOT-23 package, which typically has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate allows the MOSFET to switch on and conduct current between the source and drain.
2. Source (S): This pin is connected to the negative side of the power supply. In P-channel MOSFETs, the source is typically connected to the higher voltage.
3. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
The SI2325DS-T1-E3 provides efficient power management and is suitable for various applications requiring a small form factor and low on-resistance.
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate allows the MOSFET to switch on and conduct current between the source and drain.
2. Source (S): This pin is connected to the negative side of the power supply. In P-channel MOSFETs, the source is typically connected to the higher voltage.
3. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
The SI2325DS-T1-E3 provides efficient power management and is suitable for various applications requiring a small form factor and low on-resistance.
Manufacturer
The SI2325DS-T1-E3 is manufactured by Vishay Intertechnology. Vishay is a global company that specializes in the manufacturing of discrete semiconductors and passive electronic components. These components are essential for a wide range of electronic devices and systems, serving industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay is known for producing a wide array of products, including MOSFETs, diodes, resistors, capacitors, inductors, and optoelectronics. The company emphasizes innovation and quality, providing components that are critical to the functionality and efficiency of electronic circuits and devices globally.
Application
The SI2325DS-T1-E3 is a P-channel MOSFET typically used in applications requiring efficient switching and amplification. Its application areas include power management systems, load switches, DC-DC converters, battery-powered devices, and power supply circuits. It is also suitable for use in portable electronics, automotive systems, and telecommunications equipment. The device's low on-resistance and fast switching capabilities make it ideal for applications needing high efficiency and reliability in compact form factors.
Package
The SI2325DS-T1-E3 is packaged in an SOT-23 form factor. SOT-23 is a small outline transistor package commonly used for surface-mount devices, providing a compact and efficient solution for electronic components.
