規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 5.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 4.1A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 36 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 1160 pF @ 10 V |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
概述
Description
The SI2323DDS-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management in compact, high-efficiency applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 23 mΩ at 4.5V, reducing conduction losses.
- Small Footprint: Offered in a 3.3mm x 3.3mm PowerPAK® 1212-8 package, ideal for space-constrained designs.
- Voltage Rating: -30V drain-to-source (VDS), suitable for 12V–24V systems.
- Low Gate Charge (Qg): Enhances switching efficiency in high-frequency applications.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, automotive systems, and power supplies. Its lead-free, RoHS-compliant construction ensures environmental compliance.
For detailed specs, refer to the datasheet or Vishay’s product page.
- Low On-Resistance (RDS(on)): Typically 23 mΩ at 4.5V, reducing conduction losses.
- Small Footprint: Offered in a 3.3mm x 3.3mm PowerPAK® 1212-8 package, ideal for space-constrained designs.
- Voltage Rating: -30V drain-to-source (VDS), suitable for 12V–24V systems.
- Low Gate Charge (Qg): Enhances switching efficiency in high-frequency applications.
Common uses include load switching, battery protection, and DC-DC conversion in portable electronics, automotive systems, and power supplies. Its lead-free, RoHS-compliant construction ensures environmental compliance.
For detailed specs, refer to the datasheet or Vishay’s product page.
Equivalent
Equivalent products to the SI2323DDS-T1-GE3 (P-channel MOSFET, 20V, 4.3A) include:
- AO3401 (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 5.2A)
- IRLML6402 (P-channel, 12V, 3.7A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact compatibility in your application.
- AO3401 (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 5.2A)
- IRLML6402 (P-channel, 12V, 3.7A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact compatibility in your application.
Pinout
The SI2323DDS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins:
1. Gate (G) – Controls the transistor's switching.
2. Source (S) – Connected to the input voltage (typically higher potential for P-MOS).
3. Drain (D) – Output connection, conducts when the gate-source voltage is sufficiently negative.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in load switching, power management, and battery protection circuits.
1. Gate (G) – Controls the transistor's switching.
2. Source (S) – Connected to the input voltage (typically higher potential for P-MOS).
3. Drain (D) – Output connection, conducts when the gate-source voltage is sufficiently negative.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in load switching, power management, and battery protection circuits.
Package
The SI2323DDS-T1-GE3 is a SOT-23-3 package type. This small, surface-mount package is commonly used for low-power MOSFETs, offering compact size and efficient performance in space-constrained applications. The SOT-23-3 has three pins and is widely utilized in consumer electronics, power management, and portable devices.
