規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 3.3A (Ta), 3.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.2A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 235 pF @ 15 V |
| Power Dissipation (Max) | 1.1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
概述
Description
The SI2304DDS-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency applications. Key features include:
- Voltage Rating: -20V (drain-to-source).
- Current Rating: -4.3A (continuous drain current).
- Low On-Resistance: 50mΩ (max at VGS = -4.5V).
- Gate Threshold: -1V (typical), enabling compatibility with 3.3V/5V logic.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection in portable electronics, IoT devices, and DC-DC converters. Its low RDS(on) and fast switching enhance energy efficiency.
For detailed specs, refer to the datasheet from Vishay.
- Voltage Rating: -20V (drain-to-source).
- Current Rating: -4.3A (continuous drain current).
- Low On-Resistance: 50mΩ (max at VGS = -4.5V).
- Gate Threshold: -1V (typical), enabling compatibility with 3.3V/5V logic.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection in portable electronics, IoT devices, and DC-DC converters. Its low RDS(on) and fast switching enhance energy efficiency.
For detailed specs, refer to the datasheet from Vishay.
Equivalent
Equivalent products to the SI2304DDS-T1-GE3 (P-channel MOSFET, 20V, 4A) include:
- AO3401A (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 4.2A)
- IRLML6402 (P-channel, 12V, 3.7A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility.
- AO3401A (P-channel, 30V, 4A)
- DMG2305UX (P-channel, 20V, 4.2A)
- IRLML6402 (P-channel, 12V, 3.7A)
- BSS84 (P-channel, 50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility.
Features
The SI2304DDS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -4.3A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V.
- Threshold Voltage: -0.7V (typical), -1.5V (max).
- Fast Switching: Low gate charge (Qg = 8.5nC typical).
- Package: SOT-23-3 (small footprint).
- Applications: Power management, load switching, battery protection.
Designed for efficiency in portable and low-voltage systems.
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -4.3A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V.
- Threshold Voltage: -0.7V (typical), -1.5V (max).
- Fast Switching: Low gate charge (Qg = 8.5nC typical).
- Package: SOT-23-3 (small footprint).
- Applications: Power management, load switching, battery protection.
Designed for efficiency in portable and low-voltage systems.
Pinout
The SI2304DDS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D) – Output connection, switches to source when activated.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) (~50mΩ at VGS = -4.5V)
- Used in power switching, load control, and battery management.
Compact and efficient for space-constrained applications.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D) – Output connection, switches to source when activated.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) (~50mΩ at VGS = -4.5V)
- Used in power switching, load control, and battery management.
Compact and efficient for space-constrained applications.
Application
The SI2304DDS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power control.
3. Automotive Systems – Low-voltage applications like infotainment and lighting.
4. Consumer Electronics – USB power switching and low-side switching circuits.
5. Industrial Devices – Low-power motor control and power distribution.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, efficient power handling.
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Smartphones, tablets, and wearables for power control.
3. Automotive Systems – Low-voltage applications like infotainment and lighting.
4. Consumer Electronics – USB power switching and low-side switching circuits.
5. Industrial Devices – Low-power motor control and power distribution.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, efficient power handling.
Package
The SI2304DDS-T1-GE3 is a MOSFET in a SOT-23-3 surface-mount package. This compact, 3-pin package is widely used for low-power applications, offering efficient space utilization on PCBs. It is suitable for automated assembly processes due to its small size and standardized footprint.
