圖片僅供參考
SCT50N120
+物料清單SICFET N-CH 1200V 65A HIP247
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製造商意法半導體
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製造商部分 #SCT50N120
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正品保證
規格
| 屬性 | 價值 |
| Supplier | STMicroelectronics |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 65A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 69mOhm @ 40A, 20V |
| Vgs(th)(Max)@Id | 3V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 122 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 1900 pF @ 400 V |
| PowerDissipation(Max) | 318W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
