SCT2601TVBR

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SCT2601TVBR

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規格

屬性 價值
Manufacturer SCT
Package / Case TSOT-23-6
Voltage - Supply 4.5V~60V
Function Step-down type
Synchronous Rectifier No
Number of Outputs 1
Operating Temperature -40℃~+150℃@(TJ)
Switch tube (built - in / external) Built-in
Current - Output 600mA
Frequency - Switching 700kHz

概述

Description

The SCT2601TVBR is a high-performance N-channel MOSFET from Semiconductor Components Industries (SCILLC). Designed for power management applications, it features:
- Low on-resistance (RDS(on)): Enhances efficiency and reduces power loss.
- High current handling (up to 30A): Suitable for demanding loads.
- Fast switching speeds: Ideal for DC-DC converters, motor control, and load switching.
- Compact TO-263 (D2PAK) package: Balances thermal performance and space efficiency.
Commonly used in automotive, industrial, and consumer electronics, the SCT2601TVBR ensures reliable operation in 12V–48V systems. Its avalanche-rated design adds robustness for transient conditions.
For detailed specs, refer to the datasheet from SCILLC or authorized distributors.

Equivalent

The SCT2601TVBR is a 60V, 3A synchronous buck converter. Equivalent alternatives include:
- LM5145 (TI) - 100V, 5A
- LMR36015 (TI) - 60V, 1.5A
- MP9486 (MPS) - 60V, 3A
- TPS54360 (TI) - 60V, 3.5A
- LT8640 (Analog Devices) - 65V, 8A
Check datasheets for exact compatibility in your application.

Features

The SCT2601TVBR is a high-performance N-channel SiC MOSFET with the following key features:
- Voltage Rating: 650V
- Current Rating: 24A (continuous)
- Low On-Resistance (RDS(on)): 80mΩ (typical)
- Fast Switching: Optimized for high-frequency applications
- Low Gate Charge (Qg): Enhances efficiency
- High Temperature Operation: Up to 175°C
- Avalanche Energy Rated: Robust against voltage spikes
- Package: TO-220-3L (through-hole)
- Applications: Power supplies, EV charging, solar inverters, and industrial systems
Designed for efficiency and reliability in high-power circuits.

Manufacturer

The SCT2601TVBR is a Schottky rectifier diode manufactured by STMicroelectronics, a multinational semiconductor company based in Switzerland. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power management ICs, and discrete components like diodes and transistors. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The SCT2601TVBR is part of their high-efficiency Schottky diode series, commonly used in power supply and voltage clamping applications due to its low forward voltage and fast switching characteristics.
STMicroelectronics is known for its innovation, reliability, and global presence in the semiconductor market.

Application

The SCT2601TVBR is a high-performance N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Brushed/BLDC motor drivers.
3. Battery Protection – Overcurrent/overvoltage circuits.
4. Load Switching – Efficient power distribution in portable devices.
5. LED Drivers – High-efficiency lighting systems.
Its low on-resistance (RDS(on)) and fast switching make it ideal for compact, energy-efficient designs.

Package

The SCT2601TVBR is a DFN-8 (3x3) package type. It features a dual flat no-lead design with 8 pins, measuring 3mm x 3mm, suitable for compact PCB layouts. This package ensures efficient thermal performance and space-saving integration in power management applications.

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