圖片僅供參考
SCT2280KEGC11
+物料清單1200V, 14A, THD, SILICON-CARBIDE
-
製造商羅姆
-
製造商部分 #SCT2280KEGC11
-
有存貨10393
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Part Status | Active |
| Base Product Number | SCT2280 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
| Power Dissipation (Max) | 108W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
| Packaging | Tube |
