規格
| 屬性 | 價值 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | NPN, PNP |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 45V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 2mA, 5V |
| Power - Max | 380mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The SBC847BPDW1T1G is a type of NPN bipolar junction transistor (BJT) commonly used in electronic circuits for amplification and switching applications. Manufactured by reputable companies like ON Semiconductor, this transistor is designed to offer high performance in compact packages, making it suitable for surface-mount technology (SMT) on printed circuit boards.
Key features of the SBC847BPDW1T1G include low current consumption with a maximum collector current of 100 mA and a collector-emitter voltage of up to 45 V. It typically operates with a high transition frequency, ensuring efficient signal amplification and fast switching speeds, which are crucial in high-frequency applications. The device comes in a small SOT-363 (SC-88) package, which is advantageous for space-constrained designs.
This transistor is widely used in consumer electronics, communication devices, and other applications requiring reliable performance in small form factors. Its ease of integration into automated assembly processes makes it a popular choice in modern electronics manufacturing.
Key features of the SBC847BPDW1T1G include low current consumption with a maximum collector current of 100 mA and a collector-emitter voltage of up to 45 V. It typically operates with a high transition frequency, ensuring efficient signal amplification and fast switching speeds, which are crucial in high-frequency applications. The device comes in a small SOT-363 (SC-88) package, which is advantageous for space-constrained designs.
This transistor is widely used in consumer electronics, communication devices, and other applications requiring reliable performance in small form factors. Its ease of integration into automated assembly processes makes it a popular choice in modern electronics manufacturing.
Equivalent
The SBC847BPDW1T1G is a dual NPN bipolar junction transistor. Equivalent products include:
1. BC847B - General-purpose NPN transistor with similar specifications.
2. MMBT3904 - Common NPN transistor used in similar applications.
3. BC817 - Another small-signal NPN transistor with equivalent performance.
4. 2N3904 - Widely used NPN transistor with similar electrical characteristics.
5. BC337 - General-purpose NPN transistor with comparable parameters.
Ensure to cross-check specific parameters for compatibility in your application.
1. BC847B - General-purpose NPN transistor with similar specifications.
2. MMBT3904 - Common NPN transistor used in similar applications.
3. BC817 - Another small-signal NPN transistor with equivalent performance.
4. 2N3904 - Widely used NPN transistor with similar electrical characteristics.
5. BC337 - General-purpose NPN transistor with comparable parameters.
Ensure to cross-check specific parameters for compatibility in your application.
Features
The SBC847BPDW1T1G is a dual NPN bipolar junction transistor (BJT) housed in a compact SOT-363 surface-mount package. It features a collector-emitter voltage (V_CE) of 45V and a continuous collector current (I_C) of up to 100mA. This transistor is designed for general-purpose amplification and switching applications. It exhibits a DC current gain (h_FE) typically ranging from 200 to 450, making it suitable for small-signal amplification tasks.
The SBC847BPDW1T1G supports a maximum power dissipation (P_tot) of 300mW under standard operating conditions. It has a low collector-emitter saturation voltage, which enhances efficiency in switching applications. The device's transition frequency (f_T) is typically around 100 MHz, indicating its capability to operate in high-frequency applications. Its compact form factor and dual-transistor configuration offer space-saving advantages for densely packed circuit designs. The device is RoHS compliant, ensuring environmentally friendly usage, and is designed to meet the needs of various consumer electronics, telecommunication devices, and other low-power applications.
The SBC847BPDW1T1G supports a maximum power dissipation (P_tot) of 300mW under standard operating conditions. It has a low collector-emitter saturation voltage, which enhances efficiency in switching applications. The device's transition frequency (f_T) is typically around 100 MHz, indicating its capability to operate in high-frequency applications. Its compact form factor and dual-transistor configuration offer space-saving advantages for densely packed circuit designs. The device is RoHS compliant, ensuring environmentally friendly usage, and is designed to meet the needs of various consumer electronics, telecommunication devices, and other low-power applications.
Pinout
The SBC847BPDW1T1G is a dual NPN bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching applications. It is housed in a SOT-363 (SC-88) surface-mount package, which features a total of 6 pins. The function of the SBC847BPDW1T1G is to provide two independent NPN transistors in a single package, allowing for space-saving designs and efficient circuit integration.
Each transistor within the device has three terminals: collector, base, and emitter. For the SOT-363 package, these are typically arranged as follows:
1. Pin 1: Emitter of transistor Q1
2. Pin 2: Base of transistor Q1
3. Pin 3: Collector of transistor Q2
4. Pin 4: Emitter of transistor Q2
5. Pin 5: Base of transistor Q2
6. Pin 6: Collector of transistor Q1
The SBC847BPDW1T1G is widely used in electronic circuits for tasks such as switching, amplification, and other applications where compact size and dual transistor functionality are beneficial.
Each transistor within the device has three terminals: collector, base, and emitter. For the SOT-363 package, these are typically arranged as follows:
1. Pin 1: Emitter of transistor Q1
2. Pin 2: Base of transistor Q1
3. Pin 3: Collector of transistor Q2
4. Pin 4: Emitter of transistor Q2
5. Pin 5: Base of transistor Q2
6. Pin 6: Collector of transistor Q1
The SBC847BPDW1T1G is widely used in electronic circuits for tasks such as switching, amplification, and other applications where compact size and dual transistor functionality are beneficial.
Manufacturer
The SBC847BPDW1T1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor manufacturer that specializes in developing energy-efficient solutions for a wide range of industries. The company produces a variety of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are used in various applications, such as automotive, industrial, cloud power, and Internet of Things (IoT).
Onsemi is recognized for its focus on innovation and sustainability, aiming to address the modern demand for energy-efficient electronics. Headquartered in Phoenix, Arizona, onsemi operates globally, serving a broad customer base across different sectors. The company is known for its emphasis on delivering high-quality, reliable, and advanced semiconductor solutions that enhance the efficiency and performance of electronic systems.
Onsemi is recognized for its focus on innovation and sustainability, aiming to address the modern demand for energy-efficient electronics. Headquartered in Phoenix, Arizona, onsemi operates globally, serving a broad customer base across different sectors. The company is known for its emphasis on delivering high-quality, reliable, and advanced semiconductor solutions that enhance the efficiency and performance of electronic systems.
Application
The SBC847BPDW1T1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in various electronic applications. Key application areas include:
1. Amplification: Used in audio, radio frequency, and signal amplification circuits.
2. Switching: Ideal for switching operations in low-power applications.
3. Signal Processing: Employed in analog signal processing circuits.
4. Digital Circuits: Utilized for interfacing and driving digital logic circuits.
5. Consumer Electronics: Found in devices such as televisions, radios, and other electronic gadgets.
6. Communication Devices: Used in transmitters and receivers for modulation and demodulation tasks.
These applications take advantage of the transistor's low current and voltage ratings, making it suitable for low-power and high-frequency applications.
1. Amplification: Used in audio, radio frequency, and signal amplification circuits.
2. Switching: Ideal for switching operations in low-power applications.
3. Signal Processing: Employed in analog signal processing circuits.
4. Digital Circuits: Utilized for interfacing and driving digital logic circuits.
5. Consumer Electronics: Found in devices such as televisions, radios, and other electronic gadgets.
6. Communication Devices: Used in transmitters and receivers for modulation and demodulation tasks.
These applications take advantage of the transistor's low current and voltage ratings, making it suitable for low-power and high-frequency applications.
Package
The SBC847BPDW1T1G is a dual NPN bipolar junction transistor housed in a SOT-363 package, which is a small surface-mount plastic package commonly used in compact circuit designs.
