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S29GL032N90TFI040
+物料清單IC FLASH 32MBIT PARALLEL 48TSOP
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製造商賽普拉斯電晶體公司
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製造商部分 #S29GL032N90TFI040
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包裹 PG-TSOP-48
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有存貨6978
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Package / Case | Tray,Tray |
| Series | GL-N |
| Part Status | Discontinued at Digi-Key |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 32Mb (4M x 8, 2M x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 90ns |
| Access Time | 90 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
Key features include standard 3.0V core voltage with a 5.0V tolerant I/O, a 90 ns access time for rapid data retrieval, and a Flexible Sector Architecture that allows for sector-specific erase and programming. It supports common flash interface (CFI) and offers hardware protection for sectors to safeguard data integrity. Its primary applications are in embedded systems, consumer electronics, and automotive electronics, where reliability and performance are crucial. The S29GL032N90TFI040 is valued for its durability, longevity, and efficient power consumption, making it a viable choice for various memory-intensive applications.
Equivalent
1. Micron MT28EW032ABA - 32 Mbit NOR Flash
2. Winbond W29GL032C - 32 Mbit NOR Flash
3. SST39VF3201 - 32 Mbit NOR Flash
4. Macronix MX29LV320T - 32 Mbit NOR Flash
These alternatives generally provide similar functionalities in terms of memory capacity and voltage supply, but specific features and performance can vary. Always check compatibility with your specific application requirements.
Features
1. Density: 32 Mbit, offering a good balance between storage size and device density.
2. Architecture: Uniform 64 Kbyte sector architecture, which simplifies memory management and allows for efficient data storage and retrieval.
3. Interface: Supports an industry-standard Command Set, compatible with JEDEC standards, making it easier to integrate into existing systems.
4. Voltage: Operates at a single 3.0-Volt power supply for read, program, and erase operations, enhancing power efficiency.
5. Performance: Offers fast access times, typically around 90 ns, which is suitable for performance-demanding applications.
6. Endurance: Guarantees a minimum of 100,000 program/erase cycles per sector, which is typical for flash memory applications.
7. Data Retention: Up to 20 years, ensuring data integrity over the lifespan of the device.
8. Package: Available in several package options including TSOP, providing flexibility in design and deployment.
These features make it suitable for embedded applications, such as automotive, industrial, and communications systems.
Pinout
Key functions and features include:
- Data Bus: 16-bit data bus for read and write operations.
- Address Bus: Uses a multiplexed address bus to select storage locations.
- Sector Erase: Supports sector erase functions for efficient data management.
- Block Protection: Offers block protection to safeguard data from unintended writes.
- Read/Write Operations: Supports standard read, write, and erase operations typical of NOR Flash.
- Low Power Consumption: Designed for efficient power usage with deep power-down options.
This device is commonly used in applications requiring reliable storage with quick read access, such as embedded systems and consumer electronics. The TSOP package allows for compact integration on printed circuit boards.