RS1E200BNTB

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RS1E200BNTB

+物料清單

MOSFET N-CH 30V 20A 8HSOP

  • 製造商羅姆

  • 製造商部分 #RS1E200BNTB

  • 有存貨7565

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90-日售後保障

正品保證

規格

屬性 價值
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 20A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 3.9mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 59 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3100 pF @ 15 V
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP

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