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R6520ENZC8
+物料清單MOSFET N-CH 650V 20A TO3
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製造商部分 #R6520ENZC8
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規格
| 屬性 | 價值 |
| Supplier | Rohm Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 205mOhm @ 9.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 630µA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1400 pF @ 25 V |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PF |
