QJD1210010

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QJD1210010

+物料清單

MOSFET 2N-CH 1200V 100A SIC

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier Powerex Inc.
Package / Case Bulk
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain(Id) @ 25°C 100A (Tc)
Rds On(Max) @ Id Vgs 25mOhm @ 100A, 20V
Vgs(th)(Max) @ Id 5V @ 10mA
Gate Charge(Qg)(Max) @ Vgs 500nC @ 20V
Input Capacitance(Ciss)(Max) @ Vds 10200pF @ 800V
Power - Max 1080W
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount

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