規格
| 屬性 | 價值 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 2 A |
| Voltage-CollectorEmitterBreakdown(Max) | 60 V |
| VceSaturation(Max)@IbIc | 500mV @ 200mA, 2A |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 75 @ 1A, 2V |
| Power-Max | 800 mW |
| Frequency-Transition | 75MHz |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-261-4, TO-261AA |
概述
Description
The PZT751T1G is a NPN bipolar junction transistor (BJT) commonly used for switching and amplification applications. Manufactured by ON Semiconductor, it is designed for use in general-purpose electronic circuits. The PZT751T1G offers high gain and low saturation voltage, making it efficient for various signal amplification tasks.
Key specifications include a collector-emitter voltage (Vceo) of 60V, a collector current (Ic) of up to 1A, and a power dissipation of 1W. The device also features a high current gain (hFE) which typically ranges between 100 to 300, facilitating effective current amplification.
Encased in a SOT-223 package, the PZT751T1G is suitable for surface-mount technology, allowing for compact designs in modern electronic devices. The SOT-223 package also enhances heat dissipation, which is crucial for maintaining performance and reliability in circuits.
Overall, the PZT751T1G is a versatile and efficient component for a broad range of electronic applications, from consumer electronics to industrial systems.
Key specifications include a collector-emitter voltage (Vceo) of 60V, a collector current (Ic) of up to 1A, and a power dissipation of 1W. The device also features a high current gain (hFE) which typically ranges between 100 to 300, facilitating effective current amplification.
Encased in a SOT-223 package, the PZT751T1G is suitable for surface-mount technology, allowing for compact designs in modern electronic devices. The SOT-223 package also enhances heat dissipation, which is crucial for maintaining performance and reliability in circuits.
Overall, the PZT751T1G is a versatile and efficient component for a broad range of electronic applications, from consumer electronics to industrial systems.
Equivalent
The PZT751T1G is a PNP medium power transistor. Equivalent products may include transistors with similar specifications, such as the BC807 or BC327 series. However, ensure to cross-check key parameters like voltage, current ratings, and package types to confirm suitability for your specific application. It's advisable to refer to the datasheets and consult with manufacturers or suppliers to identify the most appropriate substitutes.
Features
The PZT751T1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching. Key features include:
1. Package Type: SOT-223, which is suitable for surface-mount applications.
2. Collector-Emitter Voltage (VCEO): Typically up to 60V.
3. Collector Current (IC): Maximum of around 1A, allowing it to handle moderate loads.
4. Power Dissipation (PD): Often around 1.5W, depending on the thermal environment.
5. DC Current Gain (hFE): High gain, typically ranging from 100 to 300, ensuring efficient amplification.
6. Transition Frequency (fT): Approximately 100 MHz, making it suitable for high-frequency applications.
7. Operating Temperature Range: Usually from -55°C to +150°C, providing reliability in various environments.
These characteristics make the PZT751T1G suitable for a wide range of applications, including signal amplification, switching, and driving loads in consumer electronics and industrial equipment.
1. Package Type: SOT-223, which is suitable for surface-mount applications.
2. Collector-Emitter Voltage (VCEO): Typically up to 60V.
3. Collector Current (IC): Maximum of around 1A, allowing it to handle moderate loads.
4. Power Dissipation (PD): Often around 1.5W, depending on the thermal environment.
5. DC Current Gain (hFE): High gain, typically ranging from 100 to 300, ensuring efficient amplification.
6. Transition Frequency (fT): Approximately 100 MHz, making it suitable for high-frequency applications.
7. Operating Temperature Range: Usually from -55°C to +150°C, providing reliability in various environments.
These characteristics make the PZT751T1G suitable for a wide range of applications, including signal amplification, switching, and driving loads in consumer electronics and industrial equipment.
Pinout
The PZT751T1G is a PNP bipolar junction transistor (BJT) typically housed in a SOT-223 package. It features three pins:
1. Pin 1 (Emitter): This pin is the emitter of the transistor, which is the source of charge carriers (holes for a PNP transistor) that are injected into the base for conduction.
2. Pin 2 (Base): The base is the control terminal of the transistor. A small current flowing into this pin allows for a much larger current to flow between the emitter and collector.
3. Pin 3 (Collector): This pin is the collector of the transistor, which collects charge carriers from the emitter that pass through the base.
The PZT751T1G is commonly used for amplification and switching applications due to its ability to handle medium power levels and its efficient switching speed.
1. Pin 1 (Emitter): This pin is the emitter of the transistor, which is the source of charge carriers (holes for a PNP transistor) that are injected into the base for conduction.
2. Pin 2 (Base): The base is the control terminal of the transistor. A small current flowing into this pin allows for a much larger current to flow between the emitter and collector.
3. Pin 3 (Collector): This pin is the collector of the transistor, which collects charge carriers from the emitter that pass through the base.
The PZT751T1G is commonly used for amplification and switching applications due to its ability to handle medium power levels and its efficient switching speed.
Manufacturer
The PZT751T1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading American semiconductor supplier company that focuses on energy-efficient electronics. The company provides a broad range of semiconductor solutions, including power and signal management, logic, discrete, and custom devices for various applications across industries such as automotive, industrial, consumer electronics, communications, and computing. They're known for their commitment to innovation, quality, and sustainability in developing products that help reduce global energy use.
Application
The PZT751T1G is a PNP bipolar junction transistor commonly used in switching and amplification applications. Its primary applications include:
1. Signal Amplification: Used in audio and radio frequency amplification circuits.
2. Switching Circuits: Ideal for fast switching applications in power management.
3. Relay Drivers: Employed to control relays and other high-power devices.
4. Voltage Regulation: Utilized in voltage regulation circuits to maintain steady voltage levels.
5. LED Drivers: Used in circuits driving LED displays for efficient operation.
These applications leverage the transistor’s ability to handle medium power levels and its fast switching capabilities.
1. Signal Amplification: Used in audio and radio frequency amplification circuits.
2. Switching Circuits: Ideal for fast switching applications in power management.
3. Relay Drivers: Employed to control relays and other high-power devices.
4. Voltage Regulation: Utilized in voltage regulation circuits to maintain steady voltage levels.
5. LED Drivers: Used in circuits driving LED displays for efficient operation.
These applications leverage the transistor’s ability to handle medium power levels and its fast switching capabilities.
Package
The PZT751T1G is an NPN Bipolar Junction Transistor (BJT) that comes in a SOT-223 package. This surface-mount package type is commonly used for medium power applications due to its compact size and efficient heat dissipation capabilities.
