PSMN2R3-100SSEJ

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PSMN2R3-100SSEJ

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APPLICATION SPECIFIC POWER MOSFE

  • 製造商Nexperia美國公司

  • 製造商部分 #PSMN2R3-100SSEJ

  • 有存貨2177

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規格

屬性 價值
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 255A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17200 pF @ 50 V
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK88 (SOT1235)
Package / Case SOT-1235
Base Product Number PSMN2R3

概述

Description

PSMN2R3-100SSEJ is a type of power semiconductor component, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), used in various electronic applications. This device is designed for efficient switching and amplification in power management systems, enhancing energy efficiency in circuits. The "100" in its designation typically refers to its voltage rating, indicating it can handle up to 100 volts, while "SSEJ" may imply specific packaging or performance characteristics.
Applications of PSMN2R3-100SSEJ include power supplies, motor drivers, and automotive electronics, where high efficiency and fast switching speeds are crucial. The device features low on-resistance, which minimizes power loss during operation. It is often used in environments that require robust thermal management due to its power handling capabilities.
Overall, the PSMN2R3-100SSEJ is essential for modern electronic designs that prioritize performance, reliability, and energy efficiency.

Equivalent

The PSMN2R3-100SSEJ is a N-channel MOSFET. Equivalent products may include the IRF3205, STP75NF75, and BSC250N10LS. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your application.

Features

The PSMN2R3-100SSEJ is an N-channel MOSFET designed for various power applications. Key features include:
- Low RDS(on): Typically around 2.3 mΩ, enabling efficient power conversion with minimal heat generation.
- High Voltage Rating: Rated for a maximum drain-source voltage (VDS) of 100V, suitable for medium-voltage applications.
- High Current Capability: Can handle continuous drain current (ID) up to 100A, making it ideal for high-power applications.
- Fast Switching Speed: Optimized for fast switching operations, enhancing performance in PWM and other switching applications.
- TO-220 Package: Provides effective thermal management and easy mounting.
- Robust Safe Operating Area (SOA): Ensures reliability in various operating conditions.
These features make the PSMN2R3-100SSEJ suitable for applications in power supplies, motor drives, and automotive systems.

Pinout

The PSMN2R3-100SSEJ is an N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in electronic circuits, specifically designed for high-efficiency power management applications. The pins are typically designated for gate (G), drain (D), and source (S) connections, along with additional pins for specific package configurations. This MOSFET is notable for its low on-resistance and high-speed switching capabilities, making it suitable for applications in power supplies, motor control, and other high-performance electronic devices. The exact pinout should be referenced from the manufacturer's datasheet for precise connections and specifications.

Manufacturer

The PSMN2R3-100SSEJ is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components. Established as a spin-off from NXP Semiconductors in 2017, Nexperia focuses on high-volume production and offers a wide range of products designed for various applications including automotive, industrial, and consumer electronics. Their expertise lies in providing efficient and reliable semiconductor solutions, with a commitment to quality and performance. Nexperia's product portfolio includes power MOSFETs, Schottky diodes, and bipolar transistors, making it a key player in the semiconductor industry.

Application

PSMN2R3-100SSEJ is a type of power MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Enhances efficiency in converting electrical power.
2. DC-DC Converters: Facilitates voltage regulation in electronic circuits.
3. Motor Control: Used in driving motors for industrial and consumer applications.
4. Battery Management Systems: Manages charging and discharging processes in battery systems.
5. LED Drivers: Controls current for LED lighting applications.
Its low on-resistance and fast switching capabilities make it suitable for these diverse areas.

Package

The PSMN2R3-100SSEJ is packaged in a DPAK (TO-252) package type. This package is designed for surface mounting and is commonly used for power MOSFET applications, providing efficient thermal performance and compact dimensions.

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