PMDPB38UNE,115

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PMDPB38UNE,115

+物料清單

MOSFET 2N-CH 20V 4A HUSON6

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90-日售後保障

正品保證

規格

屬性 價值
Supplier NXP USA Inc.,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 4A
Rds On(Max) @ Id Vgs 46mOhm @ 3A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.4nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 268pF @ 10V
Power - Max 510mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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