PC28F512P30EFB

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PC28F512P30EFB

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IC FLASH 512MBIT PAR 64EASYBGA

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規格

屬性 價值
Series Axcell™
Part Status Obsolete
Base Product Number PC28F512
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 100ns
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 64-TBGA
Supplier Device Package 64-EasyBGA (10x13)
Packaging Tray
Access Time 100 ns

概述

Description

The PC28F512P30EFB is a high-density, 512 Mb (megabit) NOR Flash memory component from the Intel StrataFlash® Embedded Memory P30 family. It is designed for embedded applications that require reliable, non-volatile storage. Key features include support for synchronous or asynchronous read modes, which offer flexibility and efficiency in accessing data. The device operates at a voltage range of 2.7V to 3.6V, supporting low power consumption crucial for battery-operated devices.
This Flash memory also features enhanced write performance through buffered programming, and supports block locking to protect data integrity. It is organized in a 64M x 8-bit or 32M x 16-bit configuration, providing flexibility depending on application needs. The PC28F512P30EFB is suitable for a wide range of applications, including mobile devices, networking equipment, and industrial applications, due to its robust feature set, high endurance, and reliability. Additionally, it offers a fast program and erase time, which is essential for applications requiring frequent data updates.

Equivalent

The PC28F512P30EFB is a 512Mb (megabit) NOR flash memory chip from Intel. Equivalent products can include similar NOR flash memory chips from other manufacturers, such as:
1. Micron: MT28F512P30
2. Cypress: S29GL512P
3. Winbond: W29GL512
These equivalents typically offer similar memory density, interface, and performance characteristics, but always verify specific requirements as specifications may vary slightly between manufacturers.

Features

The PC28F512P30EFB is a 512 Mb (megabit) flash memory device featuring advanced technologies for improved performance and reliability. Key features include:
1. Interface: It supports a synchronous interface for faster data transfer.
2. Architecture: Built on Intel's advanced 65nm technology, it offers a high-density, multi-level cell (MLC) architecture.
3. Performance: Provides fast read and write speeds, crucial for applications requiring high throughput.
4. Voltage: Operates at a core voltage of 1.8V with I/O options of 1.8V or 3.3V for flexibility in different power environments.
5. Endurance and Reliability: Offers high endurance with up to 100,000 program/erase cycles and includes sophisticated error correction techniques to ensure data integrity.
6. Security: Features advanced security options, including hardware-based protection features to safeguard data.
7. Package: Available in various packaging options to suit different design needs.
This flash memory is suitable for applications in consumer electronics, industrial systems, and automotive sectors where reliable storage solutions are necessary.

Pinout

The PC28F512P30EFB is a part of the Intel StrataFlash memory family, specifically a 512-Mbit (64 MB) Parallel NOR Flash memory. It typically comes in a 56-pin TSOP (Thin Small Outline Package) or 64-ball BGA (Ball Grid Array) package.
Pin Count:
- TSOP Package: 56 pins
- BGA Package: 64 balls
Key Functions:
- Address Pins (A0-Amax): Used to select memory locations.
- Data Pins (DQ0-DQ15): Bidirectional data pins for data input/output operations.
- CE# (Chip Enable): Activates the chip for read or write operations.
- OE# (Output Enable): Facilitates data output from the device.
- WE# (Write Enable): Initiates write operations when active.
- RESET#: Resets the memory, putting it into a known state.
- BYTE#: Selects the data bus width (8-bit or 16-bit).
- VCC: Supply voltage pin.
- VSS: Ground pin.
- WP# (Write Protect): Protects certain sections of memory from being overwritten.
- RY/BY# (Ready/Busy): Indicates the device status (ready or busy).
These pins together facilitate the device's operation as a non-volatile storage component in various electronic systems.

Manufacturer

The PC28F512P30EFB is a flash memory chip manufactured by Intel Corporation. Intel is a multinational corporation and technology company known for designing and manufacturing semiconductor products, including microprocessors, integrated graphics chips, and memory products. Founded in 1968 and headquartered in Santa Clara, California, Intel has been a leader in the semiconductor industry, playing a pivotal role in the development of computer technology and the advancement of digital data processing. The company is well-known for its innovative contributions to the hardware that powers modern computers and servers.

Application

The PC28F512P30EFB is a 512 Mb, non-volatile, parallel NOR flash memory device, widely used in applications requiring reliable data storage and fast read access. Common application areas include:
1. Embedded Systems: Used in microcontrollers and processors for storing firmware and application code.
2. Consumer Electronics: Deployed in devices like digital cameras and MP3 players for storing software and media.
3. Automotive: Utilized for infotainment systems, navigation, and ECU storage.
4. Networking Equipment: Ideal for routers and switches to store configuration data and firmware.
5. Industrial Control Systems: Provides reliable storage in harsh environments for programmable logic controllers (PLCs).
Its high density and fast access make it suitable for applications needing stable, long-term data preservation.

Package

The PC28F512P30EFB is a 512 Mbit (64MB) NOR Flash memory device from Intel, part of the P30 family. It typically comes in a 64-ball Fortified BGA or 56-lead TSOP package, designed for high-performance code and data storage applications. Make sure to verify the exact package type with the manufacturer’s datasheet.

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