PC28F00BM29EWHA

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PC28F00BM29EWHA

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IC FLASH 2GBIT PARALLEL 64FBGA

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規格

屬性 價值
Part Status Obsolete
Base Product Number PC28F00B
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 2Gbit
Memory Organization 256M x 8, 128M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 100ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 64-LBGA
Supplier Device Package 64-FBGA (11x13)
Packaging Tray
Access Time 100 ns

概述

Description

The PC28F00BM29EWHA is a high-capacity NOR Flash memory device developed by Intel. It is part of the StrataFlash® Embedded Memory family, designed to meet the needs of embedded applications that require reliable, high-speed data storage and retrieval. This memory device offers a storage capacity of 1 Gigabit (Gb), making it suitable for a wide range of applications, such as automotive, industrial, and networking systems, where durability and performance are critical.
Key features of the PC28F00BM29EWHA include its fast read and write capabilities, thanks to its multi-level cell (MLC) architecture, which allows for efficient use of storage space. The device operates on a low power supply, enhancing its suitability for battery-powered devices. It also includes advanced security features, such as block locking and password protection, ensuring data integrity and protection against unauthorized access.
Overall, the PC28F00BM29EWHA is a versatile and robust solution for applications requiring high-capacity, non-volatile memory with reliable performance.

Equivalent

The Intel PC28F00BM29EWHA is a 1Gb NAND Flash Memory chip. Equivalent products may include similar NAND Flash memory chips from manufacturers like Micron, Samsung, Toshiba, or SK Hynix. For instance, Micron's MT29F1G08ABADAWP, Samsung's K9F1G08U0C, and Toshiba's TC58NVG0S3ETA00 are potential equivalents, based on capacity and specifications. It's important to compare specific features such as package type, voltage requirements, and performance characteristics to ensure compatibility.

Features

The PC28F00BM29EWHA is part of Intel's StrataFlash memory family, known for advanced non-volatile memory technology. Key features include:
1. Density: Offers high density, making it suitable for applications requiring substantial storage.
2. Multi-Level Cell (MLC) Technology: It uses MLC to store more data per cell, enhancing storage efficiency.
3. High Performance: Provides fast read and write capabilities, improving overall system performance.
4. NOR Flash Architecture: Ensures reliable code execution and data storage with random access.
5. Extended Temperature Range: Designed to operate under a wide range of temperatures, suitable for industrial applications.
6. Low Power Consumption: Optimized for power efficiency, ideal for battery-operated devices.
7. Security Features: Includes security measures to protect data integrity and prevent unauthorized access.
8. Compatibility: Compatible with a wide range of processors and controllers, facilitating easy integration.
These features make the PC28F00BM29EWHA suitable for a variety of applications, including automotive, industrial, and consumer electronics, where robust and reliable memory solutions are required.

Pinout

The PC28F00BM29EWHA is a flash memory device. It typically comes in a package with a pin count of 56. This device is part of Intel's StrataFlash memory family, which is known for providing high-density storage solutions with fast read and write capabilities. The primary functions of the pins in such flash memory devices include:
1. Power Supply Pins: Provide the necessary power to the device.
2. Address Pins: Used to select specific memory locations within the device.
3. Data Pins: Facilitate the input and output of data to and from the memory.
4. Control Pins: Include signals such as Chip Enable (CE), Output Enable (OE), and Write Enable (WE), which manage the operation of the memory device.
5. Reset and Ready/Busy Pins: Indicate the operational status of the device, particularly during read, write, or erase operations.
For exact details on the pin configuration and functional description, referring to the official datasheet from Intel or the device's technical documentation is recommended.

Manufacturer

The PC28F00BM29EWHA is a flash memory chip manufactured by Intel Corporation. Intel is a multinational corporation and technology company primarily known for designing and manufacturing semiconductor chips. It is one of the world's largest and most well-known semiconductor companies. Intel's products are widely used in various computing devices including personal computers, servers, and embedded systems. The company is a leader in the microprocessor industry and has a significant presence in the development of new technologies related to computing and data storage.

Application

The PC28F00BM29EWHA is a flash memory chip that can be utilized in various applications. Common application areas include embedded systems, where it serves as non-volatile storage for firmware and application code. It is also used in consumer electronics such as digital cameras, smartphones, and tablets for data storage. Additionally, it finds use in industrial automation systems, facilitating data logging and firmware updates. In the automotive industry, it can be used in infotainment systems and control modules. Its reliability and performance make it suitable for any application requiring persistent data storage.

Package

The PC28F00BM29EWHA is a NOR Flash memory chip produced by Intel. It typically comes in a BGA (Ball Grid Array) package type, which is used for mounting devices with hundreds of pins in a compact space, facilitating efficient electrical performance and thermal conduction.

Frequently Asked Questions


Q: What is the memory capacity and organization of this NOR Flash?
A: This device offers 2Gbit capacity, organized as 256M x 8 or 128M x 16 bits via a parallel interface.


Q: Is this component suitable for extended temperature environments?
A: Yes, it operates from -40°C to 85°C (TA), making it ideal for industrial applications.


Q: What is the typical access and write cycle time?
A: Access time is 100 ns; word/page write cycle time is also 100 ns for fast programming.


Q: Can I use a single voltage supply for both read and write operations?
A: Yes, it requires a single supply from 2.7V to 3.6V for all read, program, and erase functions.


Q: What package options are available for this part?
A: It comes in a 64-LBGA package, with the supplier device package being 64-FBGA (11x13mm).


Q: Is this memory device surface mount or through-hole?
A: It supports surface mount (SMD) mounting only, as per the Mounting Type specification.


Q: What is the memory interface type for this flash device?
A: It uses a standard parallel memory interface for high-speed data transfer.


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