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PC28F00BM29EWHA
+物料清單IC FLASH 2GBIT PARALLEL 64FBGA
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製造商美光科技股份有限公司。
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製造商部分 #PC28F00BM29EWHA
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規格
| 屬性 | 價值 |
| Part Status | Obsolete |
| Base Product Number | PC28F00B |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8, 128M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 100ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-FBGA (11x13) |
| Packaging | Tray |
| Access Time | 100 ns |
概述
Description
Key features of the PC28F00BM29EWHA include its fast read and write capabilities, thanks to its multi-level cell (MLC) architecture, which allows for efficient use of storage space. The device operates on a low power supply, enhancing its suitability for battery-powered devices. It also includes advanced security features, such as block locking and password protection, ensuring data integrity and protection against unauthorized access.
Overall, the PC28F00BM29EWHA is a versatile and robust solution for applications requiring high-capacity, non-volatile memory with reliable performance.
Equivalent
Features
1. Density: Offers high density, making it suitable for applications requiring substantial storage.
2. Multi-Level Cell (MLC) Technology: It uses MLC to store more data per cell, enhancing storage efficiency.
3. High Performance: Provides fast read and write capabilities, improving overall system performance.
4. NOR Flash Architecture: Ensures reliable code execution and data storage with random access.
5. Extended Temperature Range: Designed to operate under a wide range of temperatures, suitable for industrial applications.
6. Low Power Consumption: Optimized for power efficiency, ideal for battery-operated devices.
7. Security Features: Includes security measures to protect data integrity and prevent unauthorized access.
8. Compatibility: Compatible with a wide range of processors and controllers, facilitating easy integration.
These features make the PC28F00BM29EWHA suitable for a variety of applications, including automotive, industrial, and consumer electronics, where robust and reliable memory solutions are required.
Pinout
1. Power Supply Pins: Provide the necessary power to the device.
2. Address Pins: Used to select specific memory locations within the device.
3. Data Pins: Facilitate the input and output of data to and from the memory.
4. Control Pins: Include signals such as Chip Enable (CE), Output Enable (OE), and Write Enable (WE), which manage the operation of the memory device.
5. Reset and Ready/Busy Pins: Indicate the operational status of the device, particularly during read, write, or erase operations.
For exact details on the pin configuration and functional description, referring to the official datasheet from Intel or the device's technical documentation is recommended.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of this NOR Flash?
A: This device offers 2Gbit capacity, organized as 256M x 8 or 128M x 16 bits via a parallel interface.
Q: Is this component suitable for extended temperature environments?
A: Yes, it operates from -40°C to 85°C (TA), making it ideal for industrial applications.
Q: What is the typical access and write cycle time?
A: Access time is 100 ns; word/page write cycle time is also 100 ns for fast programming.
Q: Can I use a single voltage supply for both read and write operations?
A: Yes, it requires a single supply from 2.7V to 3.6V for all read, program, and erase functions.
Q: What package options are available for this part?
A: It comes in a 64-LBGA package, with the supplier device package being 64-FBGA (11x13mm).
Q: Is this memory device surface mount or through-hole?
A: It supports surface mount (SMD) mounting only, as per the Mounting Type specification.
Q: What is the memory interface type for this flash device?
A: It uses a standard parallel memory interface for high-speed data transfer.