圖片僅供參考
P3M06120K4
+物料清單SICFET N-CH 650V 27A TO-247-4
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製造商PN結電晶體
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製造商部分 #P3M06120K4
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正品保證
規格
| 屬性 | 價值 |
| Supplier | PN Junction Semiconductor |
| Package | Tube |
| Series | P3M |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 27A |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 158mOhm @ 10A, 15V |
| Vgs(th)(Max)@Id | 2.2V @ 5mA |
| Vgs(Max) | +20V, -8V |
| PowerDissipation(Max) | 131W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
