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NVMTS4D3N15MC
+物料清單SINGLE N-CHANNEL POWER MOSFET 00
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製造商安森美
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製造商部分 #NVMTS4D3N15MC
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規格
| 屬性 | 價值 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 165A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.45mOhm @ 95A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 521µA |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6514 pF @ 75 V |
| Power Dissipation (Max) | 5W (Ta), 292W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFNW (8.3x8.4) |
| Package / Case | 8-PowerTDFN |
概述
Description
This model typically offers benefits such as faster read/write speeds, high endurance, and low latency compared to traditional storage solutions. The designation "4D3N15MC" may indicate specific features or configurations, such as density, interface type, or intended use cases.
Overall, NVMTS4D3N15MC represents advancements in memory technology aimed at meeting the growing demands for speed, efficiency, and reliability in data management across various sectors.
Equivalent
Features
1. Voltage Rating: It typically supports high voltage levels, often up to 150V, making it suitable for demanding applications.
2. Current Handling: The device can handle significant continuous drain current, often exceeding 40A, allowing for robust performance in power applications.
3. Low On-Resistance: It boasts a low R_DS(on), which minimizes power loss during operation, improving efficiency and thermal performance.
4. Fast Switching Speed: Designed for quick switching capabilities, it aids in reducing switching losses in high-frequency applications.
5. Thermal Performance: Enhanced thermal characteristics allow for reliable operation at elevated temperatures.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating ease of integration into various circuit designs.
These features make the NVMTS4D3N15MC suitable for use in motor drivers, power supplies, and other high-efficiency power applications.
Pinout
The pin functions are as follows:
1. Gate Outputs: Four pins are dedicated to driving the gates of N-channel MOSFETs in a half-bridge configuration.
2. Inputs: Four input pins are used for controlling the gate signals.
3. Power Supply: Pins for Vcc and GND provide the necessary power supply for the driver.
4. Bootstrap Pins: Two pins are used for bootstrap capacitors, essential for driving high-side MOSFET gates.
5. Fault Indication: Typically, a pin may serve for fault indication or diagnostics.
This integration enables efficient switching and control of MOSFETs in power applications. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.
Manufacturer
Nexperia is known for its expertise in delivering high-volume, cost-effective semiconductor products and is focused on improving efficiency and performance in electronic designs. The company's product portfolio includes MOSFETs, diodes, and other essential components that are integral to modern electronic systems.
Founded as a spin-off from NXP Semiconductors in 2017, Nexperia has established itself as a leading player in the semiconductor industry, emphasizing innovation, quality, and customer satisfaction. Their products are widely used in applications ranging from power management to signal processing, making them a critical component in the advancement of technology across various sectors.
Application
1. Power Management: Efficient switching in power supplies and converters.
2. Motor Control: Driving DC and brushless motors in industrial and automotive applications.
3. Load Switching: Controlling high-power loads in consumer electronics and industrial devices.
4. DC-DC Converters: Used in step-down or boost converters for efficient energy conversion.
5. Battery Management Systems: Ensuring safe charging and discharging in battery packs.
Its low on-resistance and fast switching capabilities make it suitable for these applications.