NTMFS4C10NBT1G

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NTMFS4C10NBT1G

+物料清單

MOSFET N-CH 30V 16.4A/46A 5DFN

  • 製造商安森美

  • 製造商部分 #NTMFS4C10NBT1G

  • 有存貨9305

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規格

屬性 價值
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V
Power Dissipation (Max) 2.51W (Ta), 23.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NTMFS4

概述

Description

NTMFS4C10NBT1G is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor, designed for various power management applications. It features a low RDS(on) value, ensuring efficient performance by minimizing conduction losses. With a voltage rating of 100V and a continuous drain current of 45A, it is suitable for high-efficiency switching applications in power supplies, motor drives, and automotive systems.
The device is housed in a TO-220 package, which facilitates effective thermal dissipation. Its robust design allows for reliable operation in demanding environments. Key specifications include a maximum gate-source voltage of ±20V, making it compatible with standard gate drive circuits.
NTMFS4C10NBT1G is favored in scenarios where space and thermal management are critical, enabling compact designs with high power efficiency. Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines for optimal application performance.

Equivalent

The NTMFS4C10NBT1G is a N-channel MOSFET. Equivalent products include the NTMFS4C10NBT1, BSS138, and IRF520. Additionally, newer alternatives may be available, so it's advisable to check with major semiconductor manufacturers or distributors for the latest equivalents. Always consider parameters like voltage, current ratings, and package types when selecting an equivalent.

Features

The NTMFS4C10NBT1G is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 40V, suitable for low to medium voltage applications.
2. Current Rating: Handles continuous drain current (Id) of up to 10A, accommodating a range of load demands.
3. Low Rds(on): Offers a low on-resistance (Rds(on)) of around 10mΩ, enhancing efficiency by minimizing power loss during operation.
4. Fast Switching: Designed for rapid switching capabilities, making it ideal for applications like power management and DC-DC converters.
5. Thermal Performance: Features a high junction-to-ambient thermal resistance, ensuring stable operation under thermal stress.
6. Package Type: Available in a compact SO-8 package, facilitating easy integration into circuit designs.
7. RoHS Compliant: Meets environmental regulations, promoting eco-friendly electronics.
These attributes make the NTMFS4C10NBT1G suitable for applications in power supplies, motor drives, and automotive systems.

Pinout

The NTMFS4C10NBT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 8 pins. It is designed for low voltage applications and is commonly used for switching and amplification purposes in various electronic circuits.
The pin configuration and their typical functions are as follows:
1. Gate (G): Controls the MOSFET operation; when a voltage is applied, it turns the device on.
2. Drain (D): The output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
In the package, the remaining pins are typically used for thermal and mounting purposes, depending on the specific package type (e.g., TO-220, DPAK). This MOSFET is notable for its low R_DS(on) and fast switching capabilities, making it suitable for applications like power management and DC-DC converters.
For detailed specifications, please refer to the manufacturer's datasheet.

Manufacturer

The NTMFS4C10NBT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of products, including power management, analog, logic, discrete, and custom devices. The company serves various markets such as automotive, industrial, telecommunications, computing, consumer electronics, and medical devices. ON Semiconductor focuses on providing energy-efficient and high-performance semiconductor solutions, playing a key role in enabling a sustainable and connected world. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through various acquisitions and continues to innovate in the semiconductor industry.

Application

The NTMFS4C10NBT1G is a N-channel MOSFET commonly used in various applications, such as power management, DC-DC converters, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies and battery management systems. Additionally, it is used in industrial circuits, consumer electronics, and renewable energy systems, including solar inverters. Its compact package also allows for space-saving designs in PCB layouts.

Package

The NTMFS4C10NBT1G is packaged in a TO-220 package type, which is designed for efficient heat dissipation and easy mounting on heat sinks in power applications.

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