規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 6A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 1200 pF @ 16 V |
| Power Dissipation (Max) | 8.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
概述
Description
NTF6P02T3G is an N-channel MOSFET designed for power management applications. Key features include a 60V drain-source voltage (VDS), 6A continuous drain current (ID), and low on-resistance (RDS(on)) for efficient switching. It operates with a gate-source voltage (VGS) range of ±20V and is housed in a DPAK (TO-252) package, suitable for space-constrained designs.
This MOSFET is optimized for high-speed switching, making it ideal for DC-DC converters, motor control, and load switching in industrial, automotive, and consumer electronics. Its low gate charge (QG) and fast switching characteristics minimize power losses.
The device includes built-in ESD protection and is RoHS-compliant. Always refer to the datasheet for detailed specifications and application guidelines.
This MOSFET is optimized for high-speed switching, making it ideal for DC-DC converters, motor control, and load switching in industrial, automotive, and consumer electronics. Its low gate charge (QG) and fast switching characteristics minimize power losses.
The device includes built-in ESD protection and is RoHS-compliant. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
The NTF6P02T3G is a 60V P-channel MOSFET by ON Semiconductor. Equivalent alternatives include:
- IRF9Z34N (International Rectifier)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- SUD50P06-09L-E3 (Vishay)
Check datasheets for exact specs (VDS, ID, RDS(on)) before substitution. Most are 60V P-channel MOSFETs with similar characteristics.
- IRF9Z34N (International Rectifier)
- FQP27P06 (Fairchild/ON Semi)
- STP27P6F6 (STMicroelectronics)
- SUD50P06-09L-E3 (Vishay)
Check datasheets for exact specs (VDS, ID, RDS(on)) before substitution. Most are 60V P-channel MOSFETs with similar characteristics.
Features
The NTF6P02T3G is an N-channel MOSFET with the following key features:
- Voltage Rating: 20V (Drain-Source, VDSS)
- Current Rating: 6A (Continuous Drain Current, ID)
- Low On-Resistance: 45mΩ (RDS(on) at VGS = 4.5V)
- Gate Threshold Voltage: 1V (Typical, VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-223 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC converters
Designed for efficiency in low-voltage applications, it offers robust performance with minimal power loss.
- Voltage Rating: 20V (Drain-Source, VDSS)
- Current Rating: 6A (Continuous Drain Current, ID)
- Low On-Resistance: 45mΩ (RDS(on) at VGS = 4.5V)
- Gate Threshold Voltage: 1V (Typical, VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-223 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC converters
Designed for efficiency in low-voltage applications, it offers robust performance with minimal power loss.
Pinout
The NTF6P02T3G is a P-channel MOSFET with 3 pins and the following functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side switching).
3. Source (S): Connects to the power supply (VDD).
Key features:
- -20V drain-source voltage (VDS)
- -6.0A continuous drain current (ID)
- Low on-resistance (RDS(on)GS = -4.5V)
- SOT-23-3 package
Common applications include power management, load switching, and battery protection.
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side switching).
3. Source (S): Connects to the power supply (VDD).
Key features:
- -20V drain-source voltage (VDS)
- -6.0A continuous drain current (ID)
- Low on-resistance (RDS(on)GS = -4.5V)
- SOT-23-3 package
Common applications include power management, load switching, and battery protection.
Application
The NTF6P02T3G is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation and switching in DC-DC converters.
2. Load Switching – Controlling power distribution in portable devices.
3. Battery Protection – Reverse polarity and overcurrent protection.
4. Automotive Systems – Electronic control units (ECUs) and infotainment.
5. Consumer Electronics – Power switches in smartphones, tablets, and wearables.
Its low on-resistance and compact package make it ideal for efficient, space-constrained applications.
1. Power Management – Voltage regulation and switching in DC-DC converters.
2. Load Switching – Controlling power distribution in portable devices.
3. Battery Protection – Reverse polarity and overcurrent protection.
4. Automotive Systems – Electronic control units (ECUs) and infotainment.
5. Consumer Electronics – Power switches in smartphones, tablets, and wearables.
Its low on-resistance and compact package make it ideal for efficient, space-constrained applications.
