圖片僅供參考
NTE4151PT1G
+物料清單MOSFET P-CH 20V 760MA SC89-3
-
製造商安森美
-
製造商部分 #NTE4151PT1G
-
有存貨3220
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Part Status | Active |
| Base Product Number | NTE4151 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 760mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 350mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V |
| Vgs (Max) | ±6V |
| Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 5 V |
| Power Dissipation (Max) | 313mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-3 |
| Package / Case | SC-89, SOT-490 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Equivalent
Equivalent products to the NTE4151PT1G (a PNP transistor) include:
- BC557 (general-purpose PNP)
- 2N3906 (widely used PNP)
- KSP2222A (PNP counterpart to 2N2222)
- MMBT5401 (SMD equivalent)
Check datasheets for exact specs like voltage/current ratings. Always verify pinouts and parameters before substitution.
- BC557 (general-purpose PNP)
- 2N3906 (widely used PNP)
- KSP2222A (PNP counterpart to 2N2222)
- MMBT5401 (SMD equivalent)
Check datasheets for exact specs like voltage/current ratings. Always verify pinouts and parameters before substitution.
Features
The NTE4151PT1G is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V drain-to-source (VDSS).
- Current Handling: -4.3A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Package: SOT-223 (compact surface-mount).
- Applications: Power management, load switching, DC-DC converters.
Compact, efficient, and suitable for low-voltage power control.
- Voltage Rating: -30V drain-to-source (VDSS).
- Current Handling: -4.3A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Package: SOT-223 (compact surface-mount).
- Applications: Power management, load switching, DC-DC converters.
Compact, efficient, and suitable for low-voltage power control.
Application
The NTE4151PT1G is a P-channel MOSFET commonly used in:
1. Power Management – Switching and regulation in DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Battery Protection – Reverse polarity and overcurrent protection circuits.
4. Motor Control – Driving small motors in automotive or consumer electronics.
5. LED Drivers – Efficient power control for lighting systems.
Its low on-resistance and compact SOT-23 package make it suitable for space-constrained, low-voltage applications.
1. Power Management – Switching and regulation in DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Battery Protection – Reverse polarity and overcurrent protection circuits.
4. Motor Control – Driving small motors in automotive or consumer electronics.
5. LED Drivers – Efficient power control for lighting systems.
Its low on-resistance and compact SOT-23 package make it suitable for space-constrained, low-voltage applications.
