NT5TU64M16HG-BE

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NT5TU64M16HG-BE

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規格

屬性 價值
EU Ro HS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8542.32.00.32
Automotive No
PPAP No
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Mounting Type Surface Mount
Package Height 0.8(Max)
Package Width 8
Package Length 12.5
PCB changed 84
Package / Case BGA
Supplier Device Package BGA
Pin Count 84
Lead Shape Ball
Chip Density (bit) 1G
Number of Bits / Word (bit) 16
Data Bus Width (bit) 16
Maximum Clock Rate (M Hz) 1066
DRAM Type DDR2 SDRAM
Organization 64Mx16
Number of Internal Banks 8
Number of Words per Bank 8M
Address Bus Width (bit) 16
Operating Current (m A) 165
Number of I / O Lines (bit) 16
Maximum Access Time (ns) 0.35
Interface Type SSTL_1.8

概述

Description

The NT5TU64M16HG-BE is a 1GB DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) module designed for use in various computing applications. It features a 64-bit wide data bus, which allows for efficient data transfer rates, making it suitable for both consumer and enterprise-level devices. The module operates at a voltage of 1.5V, providing energy efficiency while delivering performance.
With a clock frequency typically around 800 MHz, the NT5TU64M16HG-BE offers substantial bandwidth for memory-intensive tasks, such as gaming, multimedia processing, and server operations. It adheres to the JEDEC (Joint Electron Device Engineering Council) standards for DDR3 memory, ensuring compatibility with a wide range of motherboards and systems.
This component is often utilized in laptops, desktops, and embedded systems, offering a balance of cost-effectiveness and performance. Its compact design and reliability make it a popular choice for manufacturers and consumers looking to upgrade or replace memory in their devices.

Equivalent

The NT5TU64M16HG-BE chip is a 1GB DDR3 SDRAM memory module. Equivalent products may include other DDR3 1GB modules from manufacturers like Micron, Hynix, Samsung, or Elpida, such as HMT112S6BFR8C-G7, M471B5673FH0, or D9QBJ. Ensure compatibility with your specific application regarding speed, voltage, and form factor (e.g., SO-DIMM or DIMM). Always consult manufacturer specifications for exact matches.

Features

The NT5TU64M16HG-BE is a 1GB DDR2 SDRAM memory module designed for use in various computing applications. Key features include:
1. Density: 1GB capacity, suitable for enhancing system memory.
2. Type: DDR2 (Double Data Rate 2), offering improved performance over DDR1.
3. Speed: Operates at a clock speed of 400 MT/s (megatransfers per second), with a data rate of 800 Mbps.
4. Organization: 64Mx16 configuration, providing a balanced data path width.
5. Voltage: Operates at a low voltage of 1.8V, which helps reduce power consumption.
6. Package: Available in a compact 60-pin TSOP II package, suitable for space-constrained designs.
7. Latency: Offers lower latency compared to older memory types, enhancing overall system responsiveness.
These features make the NT5TU64M16HG-BE suitable for various applications, including desktops, laptops, and embedded systems that require efficient memory solutions.

Pinout

The NT5TU64M16HG-BE is a 1Gb DDR3 SDRAM chip, featuring a 72-pin TSOP II package. It operates at a voltage of 1.5V and supports data rates up to 1600 MT/s. The pin count is 72, and the primary function of this memory chip is to provide high-speed volatile memory for use in various electronic devices, including computers, laptops, and other digital systems. Its functionality includes data storage, access, and transfer, making it essential for system performance and responsiveness.

Manufacturer

The NT5TU64M16HG-BE is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and production of dynamic random-access memory (DRAM) products. Founded in 1995, Nanya primarily focuses on DRAM modules and chips for various applications, including computers, servers, and consumer electronics. The company is noted for its commitment to innovation in memory technology, aiming to deliver high-performance and cost-effective solutions. Nanya is one of the key players in the global semiconductor industry, particularly in the DRAM market, where it competes with other major manufacturers like Samsung, SK Hynix, and Micron. With a focus on research and development, Nanya continues to expand its product offerings and enhance memory performance, contributing to advancements in computing and electronic devices.

Application

The NT5TU64M16HG-BE is a 1GB DDR3 SDRAM memory module primarily used in various electronic applications, including:
1. Computers: Enhancing performance in laptops and desktops.
2. Servers: Providing reliable memory for data processing and server operations.
3. Embedded Systems: Supporting memory needs in industrial and consumer electronics.
4. Networking Devices: Optimizing performance in routers and switches.
5. Consumer Electronics: Used in gaming consoles, TVs, and multimedia devices for improved responsiveness.
Its low power consumption and high-speed data transfer capabilities make it suitable for these applications.

Package

The NT5TU64M16HG-BE is a DDR3 SDRAM memory module packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of packaging is commonly used for SDRAM chips, facilitating compact design and efficient thermal management in electronic applications.

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