規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 45 V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 420 @ 2mA, 5V |
| Power - Max | 225 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The NSVBC850CLT1G is a NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplification and switching applications. Key features include:
- Low voltage operation (up to 50V collector-emitter).
- High current gain (hFE) for efficient signal amplification.
- Compact SOT-23 package, suitable for space-constrained designs.
Typical uses include audio amplification, signal processing, and low-power switching in consumer electronics and industrial circuits. Its small size and reliable performance make it ideal for portable and embedded systems.
For detailed specifications, refer to the datasheet from ON Semiconductor.
- Low voltage operation (up to 50V collector-emitter).
- High current gain (hFE) for efficient signal amplification.
- Compact SOT-23 package, suitable for space-constrained designs.
Typical uses include audio amplification, signal processing, and low-power switching in consumer electronics and industrial circuits. Its small size and reliable performance make it ideal for portable and embedded systems.
For detailed specifications, refer to the datasheet from ON Semiconductor.
Features
The NSVBC850CLT1G is a high-performance Schottky barrier diode with the following key features:
- Low Forward Voltage Drop (VF): Typically 0.38V at 1A, enhancing efficiency.
- High Current Capability: Rated for 8A continuous forward current.
- Fast Switching: Optimized for high-speed applications.
- Low Reverse Leakage: Ensures minimal power loss.
- High Surge Current Tolerance: Withstands transient overloads.
- Compact Package: SOD-123FL for space-saving PCB designs.
- Wide Operating Temperature Range: -55°C to +150°C for robust performance.
Ideal for power rectification, DC-DC converters, and reverse polarity protection.
- Low Forward Voltage Drop (VF): Typically 0.38V at 1A, enhancing efficiency.
- High Current Capability: Rated for 8A continuous forward current.
- Fast Switching: Optimized for high-speed applications.
- Low Reverse Leakage: Ensures minimal power loss.
- High Surge Current Tolerance: Withstands transient overloads.
- Compact Package: SOD-123FL for space-saving PCB designs.
- Wide Operating Temperature Range: -55°C to +150°C for robust performance.
Ideal for power rectification, DC-DC converters, and reverse polarity protection.
Pinout
The NSVBC850CLT1G is a 5-pin Schottky barrier diode array designed for ESD protection and signal clamping.
Pin Functions:
1. Pin 1 (Anode 1): Connects to the first diode's anode.
2. Pin 2 (Anode 2): Connects to the second diode's anode.
3. Pin 3 (Common Cathode): Shared cathode for both diodes.
4. Pin 4 (Anode 3): Connects to the third diode's anode.
5. Pin 5 (Anode 4): Connects to the fourth diode's anode.
Function:
- Provides bidirectional ESD protection (up to ±15kV) for high-speed data lines (e.g., USB, HDMI).
- Low capacitance (~3pF) ensures minimal signal distortion.
- Used in voltage clamping and transient suppression.
Package: SOT-23-5.
Pin Functions:
1. Pin 1 (Anode 1): Connects to the first diode's anode.
2. Pin 2 (Anode 2): Connects to the second diode's anode.
3. Pin 3 (Common Cathode): Shared cathode for both diodes.
4. Pin 4 (Anode 3): Connects to the third diode's anode.
5. Pin 5 (Anode 4): Connects to the fourth diode's anode.
Function:
- Provides bidirectional ESD protection (up to ±15kV) for high-speed data lines (e.g., USB, HDMI).
- Low capacitance (~3pF) ensures minimal signal distortion.
- Used in voltage clamping and transient suppression.
Package: SOT-23-5.
Manufacturer
The NSVBC850CLT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NSVBC850CLT1G is a Schottky diode, commonly used in high-speed switching applications. ON Semiconductor provides such components for efficient power conversion and circuit protection.
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NSVBC850CLT1G is a Schottky diode, commonly used in high-speed switching applications. ON Semiconductor provides such components for efficient power conversion and circuit protection.
Application
The NSVBC850CLT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in:
1. Switching Circuits – For load control in relays, LEDs, and small motors.
2. Amplification – Low-power signal amplification in audio and RF applications.
3. Consumer Electronics – Found in devices like remote controls, toys, and small appliances.
4. Automotive Systems – Used in sensors, lighting, and basic control modules.
5. Industrial Controls – Supports logic circuits and driver stages.
Its compact SOT-23 package and moderate current/voltage ratings make it suitable for space-constrained, low-power designs.
1. Switching Circuits – For load control in relays, LEDs, and small motors.
2. Amplification – Low-power signal amplification in audio and RF applications.
3. Consumer Electronics – Found in devices like remote controls, toys, and small appliances.
4. Automotive Systems – Used in sensors, lighting, and basic control modules.
5. Industrial Controls – Supports logic circuits and driver stages.
Its compact SOT-23 package and moderate current/voltage ratings make it suitable for space-constrained, low-power designs.
Package
The NSVBC850CLT1G is a Schottky barrier diode in a SOD-123 surface-mount package. This compact package is designed for high-efficiency rectification in low-voltage, high-speed applications. Its small size (approx. 2.5mm x 1.6mm) makes it suitable for space-constrained PCB designs.