規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 6 A |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 600mA, 6A |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 120 @ 1A, 2V |
| Power - Max | 800 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The NSS60601MZ4T1G is a 60V, 6A N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) of 22mΩ (max) at 10V, ensuring minimal power loss and improved thermal performance.
Key characteristics:
- Voltage Rating: 60V
- Current Rating: 6A (continuous)
- Low Gate Charge (Qg): Enhances switching efficiency.
- Fast Switching Speed: Suitable for DC-DC converters, motor control, and load switching.
- Package: SOT-223 (compact, surface-mount).
Ideal for battery management, power supplies, and automotive systems, this MOSFET balances performance, size, and cost. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet from ON Semiconductor.
Key characteristics:
- Voltage Rating: 60V
- Current Rating: 6A (continuous)
- Low Gate Charge (Qg): Enhances switching efficiency.
- Fast Switching Speed: Suitable for DC-DC converters, motor control, and load switching.
- Package: SOT-223 (compact, surface-mount).
Ideal for battery management, power supplies, and automotive systems, this MOSFET balances performance, size, and cost. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet from ON Semiconductor.
Equivalent
Equivalent products to the NSS60601MZ4T1G (ON Semiconductor P-Channel MOSFET) include:
- SI2301DS-T1-GE3 (Vishay)
- DMG2305UX-7 (Diodes Inc.)
- BSS84 (Infineon/NXP)
- FDN340P (ON Semiconductor)
These are similar P-Channel MOSFETs with comparable specs (e.g., -20V, -1.3A to -2A). Verify exact parameters for your application.
- SI2301DS-T1-GE3 (Vishay)
- DMG2305UX-7 (Diodes Inc.)
- BSS84 (Infineon/NXP)
- FDN340P (ON Semiconductor)
These are similar P-Channel MOSFETs with comparable specs (e.g., -20V, -1.3A to -2A). Verify exact parameters for your application.
Manufacturer
The NSS60601MZ4T1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and sensor solutions for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NSS60601MZ4T1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor provides high-quality components for various electronic designs.
The NSS60601MZ4T1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor provides high-quality components for various electronic designs.
Application
The NSS60601MZ4T1G is a P-channel MOSFET commonly used in:
1. Power Management – Load switches, battery protection.
2. Portable Electronics – Smartphones, tablets (power control).
3. Automotive Systems – Infotainment, lighting control.
4. DC-DC Converters – Voltage regulation in power supplies.
5. Industrial Applications – Motor drives, circuit protection.
Its low on-resistance (RDS(on)) and compact package (SOT-23-3) make it ideal for space-constrained, high-efficiency designs.
1. Power Management – Load switches, battery protection.
2. Portable Electronics – Smartphones, tablets (power control).
3. Automotive Systems – Infotainment, lighting control.
4. DC-DC Converters – Voltage regulation in power supplies.
5. Industrial Applications – Motor drives, circuit protection.
Its low on-resistance (RDS(on)) and compact package (SOT-23-3) make it ideal for space-constrained, high-efficiency designs.
