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NCV57001DWR2G
+物料清單DGTL ISO 1.2KV 1CH GT DVR 16SOIC
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製造商安森美
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製造商部分 #NCV57001DWR2G
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有存貨24042
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正品保證
規格
| 屬性 | 價值 |
| PartStatus | Active |
| Technology | Capacitive Coupling |
| NumberofChannels | 1 |
| Voltage-Isolation | 1200Vrms |
| CommonModeTransientImmunity(Min) | 100kV/µs |
| PropagationDelaytpLH/tpHL(Max) | 90ns, 90ns |
| Rise/FallTime(Typ) | 10ns, 15ns |
| Current-OutputHigh,Low | 7.8A, 7.1A |
| Voltage-OutputSupply | 0V ~ 24V |
| Grade | Automotive |
| OperatingTemperature | -40°C ~ 125°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 16-SOIC (0.295", 7.50mm Width) |
| SupplierDevicePackage | 16-SOIC |
| ApprovalAgency | UL, VDE |
| BaseProductNumber | NCV57001 |
| Qualification | AEC-Q100 |
概述
Description
Key features of the NCV57001DWR2G include its ability to deliver up to 4A of peak current, which enables rapid switching of power devices, reducing switching losses. It operates over a wide voltage range and features a built-in protection mechanism to safeguard against overcurrent and undervoltage conditions. The device ensures galvanic isolation, which enhances safety and minimizes noise transmission between high-power and low-power sections of a system.
The NCV57001DWR2G is known for its low propagation delay and high-efficiency operation, which are critical for high-frequency applications. It comes in a compact SOIC-8 package, making it suitable for space-constrained environments. This gate driver is especially well-suited for applications in electric vehicles, renewable energy systems, and industrial motor drives.
Equivalent
1. IXYS IXDN609SI - Dual low-side gate driver.
2. Microchip Technology's MIC4427 - Dual high-speed power MOSFET driver.
3. Texas Instruments UCC27511 - High-speed low-side gate driver.
Always verify compatibility based on your specific application requirements.
Features
1. High Output Current: Capable of sourcing and sinking up to 4 A, which ensures effective switching for power devices.
2. Fast Switching: Features a short propagation delay, typically around 60 ns, enhancing efficiency in high-frequency applications.
3. Isolation: Offers galvanic isolation up to 5 kVrms, improving safety and reducing noise coupling in high-voltage applications.
4. Wide Supply Voltage Range: Operates from 7.5 V to 30 V, providing flexibility in power supply options.
5. Protection Features: Includes undervoltage lockout (UVLO) and thermal shutdown to protect against component damage.
6. Desaturation Detection: Offers fault detection for IGBTs and MOSFETs, enhancing reliability.
7. Input Compatibility: Supports both TTL and CMOS logic inputs for diverse interfacing options.
8. Package: Available in SOIC-8, supporting compact designs.
These features make it suitable for automotive, industrial, and consumer applications where efficient and reliable power management is critical.
Pinout
Key features include a wide supply voltage range, under-voltage lockout protection, and the ability to source and sink high peak currents. The device ensures robust operation with its short propagation delays and high noise immunity. It typically has a separate power ground and logic ground, which helps in reducing loop inductance and improving performance. The NCV57001DWR2G is particularly appreciated for its reliability in automotive and industrial environments.