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NCP51530BDR2G
+物料清單IC HALF BRIDGE DRIVER 3.5A 8SOIC
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製造商安森美
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製造商部分 #NCP51530BDR2G
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有存貨4017
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正品保證
規格
| 屬性 | 價值 |
| Part Status | Active |
| Base Product Number | NCP51530 |
| Output Configuration | Half Bridge (2) |
| Applications | General Purpose |
| Interface | Logic, PWM |
| Load Type | Inductive, Capacitive |
| Technology | Power MOSFET |
| Current - Output / Channel | 3.5A |
| Current - Peak Output | 3A |
| Voltage - Supply | 10V ~ 17V |
| Voltage - Load | 700V |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Features | Bootstrap Circuit |
| Fault Protection | UVLO |
| Mounting Type | Surface Mount |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
Key features of the NCP51530BDR2G include:
1. Output Drive Capability: It provides a peak output current, allowing it to effectively drive large power transistors.
2. Input-to-Output Isolation: It offers reinforced isolation, ensuring safety and reliability in high-voltage applications.
3. UVLO Protection: The device includes under-voltage lockout (UVLO) protection on both the control and power sides to prevent malfunction under low-voltage conditions.
4. Wide Temperature Range: It operates over a broad temperature range, making it versatile for various industrial applications.
5. Compact Package: Available in a compact SOIC-8 package, which is suitable for space-constrained designs.
The NCP51530BDR2G is ideal for applications such as DC-DC converters, motor drives, and other power management systems.
Equivalent
1. TI UCC27714
2. Infineon 1EDN8550B
3. Microchip MIC4606
4. Power Integrations SCALE-iDriver SID1182K
5. STMicroelectronics STGAP2S
These alternatives offer similar functionalities like high-speed switching and efficient MOSFET or IGBT gate driving, but always check the datasheets to ensure compatibility with your specific application.
Features
1. High Isolation Voltage: Provides robust isolation, crucial for high-voltage applications.
2. High Output Current: Delivers up to 5 A peak current for efficient switching of power devices.
3. Fast Propagation Delay: Ensures rapid switching, enhancing device performance and efficiency.
4. Wide Supply Voltage Range: Compatible with a range of supply voltages, offering design flexibility.
5. Under-Voltage Lockout (UVLO): Protects the device from operating with insufficient voltage, enhancing reliability.
6. Low Power Consumption: Optimized for minimal power usage, contributing to overall system efficiency.
7. Thermal Protection: Includes features to manage and protect against overheating.
8. Compact Package: Available in a small form factor, facilitating integration into various designs.
9. Compatibility with Wide Bandgap Semiconductors: Suitable for driving SiC and GaN transistors, supporting advanced power electronics applications.
These features make the NCP51530BDR2G suitable for applications requiring reliable and efficient power transistor driving, such as inverters, motor drives, and power supplies.
Pinout
1. VDD: Supply voltage input.
2. IN+: Non-inverting input.
3. IN-: Inverting input.
4. GND: Ground connection.
5. OUTA: Output for the high-side gate drive.
6. OUTB: Output for the low-side gate drive.
7. NC: No connection.
8. VSS: Negative supply voltage input or ground reference for the low-side switch.
This configuration allows for effective control in half-bridge and full-bridge power circuits, making the NCP51530BDR2G suitable for a variety of applications in power conversion and motor control systems.