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規格
| 屬性 | 價值 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | TO-220F-3 |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 11.5A |
| Pd - Power Dissipation | 32.6W |
| Drain to Source Voltage (Vdss) | 650V |
| Rds(on) | 360mΩ@10V,7A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 19nC@10V |
| Input Capacitance(Ciss @ Vds) | 870pF@50V |
| Reverse Transfer Capacitance (Crss @ Vds) | 1.8pF |
概述
Description
The NCE65T360F is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 650V
- Current Rating: 36A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.36Ω, reducing conduction losses
- Fast Switching: Optimized for efficiency in switching circuits
- Package: TO-220F (isolated tab for better thermal management)
Commonly used in:
- Switching power supplies (SMPS)
- Motor control
- DC-DC converters
- LED drivers
Its robust design ensures reliability in high-voltage, high-current environments while maintaining thermal efficiency. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: 650V
- Current Rating: 36A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.36Ω, reducing conduction losses
- Fast Switching: Optimized for efficiency in switching circuits
- Package: TO-220F (isolated tab for better thermal management)
Commonly used in:
- Switching power supplies (SMPS)
- Motor control
- DC-DC converters
- LED drivers
Its robust design ensures reliability in high-voltage, high-current environments while maintaining thermal efficiency. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
Equivalent products to the NCE65T360F (a 650V, 36A IGBT) include:
- Infineon: IKW40N65T5 (650V, 40A)
- STMicroelectronics: STGW40H65DFB (650V, 40A)
- ON Semiconductor: FGH40T65SQD (650V, 40A)
- Mitsubishi: CM300DY-24NF (600V, 50A, dual module)
Check datasheets for exact compatibility in your application.
- Infineon: IKW40N65T5 (650V, 40A)
- STMicroelectronics: STGW40H65DFB (650V, 40A)
- ON Semiconductor: FGH40T65SQD (650V, 40A)
- Mitsubishi: CM300DY-24NF (600V, 50A, dual module)
Check datasheets for exact compatibility in your application.
Features
The NCE65T360F is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 650V, suitable for high-voltage applications.
- Current Rating: 36A continuous drain current.
- Low On-Resistance: 65mΩ (max) at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Low Gate Charge (Qg): Enhances efficiency in power conversion.
- Avalanche Energy Rated: Improves reliability in rugged conditions.
- Package: TO-220F (fully insulated), ensuring better thermal performance and safety.
- Applications: Used in power supplies, motor drives, and inverters.
This MOSFET balances efficiency, thermal performance, and durability for demanding power electronics.
- Voltage Rating: 650V, suitable for high-voltage applications.
- Current Rating: 36A continuous drain current.
- Low On-Resistance: 65mΩ (max) at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Low Gate Charge (Qg): Enhances efficiency in power conversion.
- Avalanche Energy Rated: Improves reliability in rugged conditions.
- Package: TO-220F (fully insulated), ensuring better thermal performance and safety.
- Applications: Used in power supplies, motor drives, and inverters.
This MOSFET balances efficiency, thermal performance, and durability for demanding power electronics.
Pinout
The NCE65T360F is a 65A, 360V IGBT module with a 3-pin configuration (TO-247 package). Its primary functions include:
- Collector (C): High-current input/output.
- Emitter (E): Ground/return path.
- Gate (G): Control signal input for switching.
Designed for high-power applications like motor drives and inverters, it integrates fast switching and low conduction losses.
- Collector (C): High-current input/output.
- Emitter (E): Ground/return path.
- Gate (G): Control signal input for switching.
Designed for high-power applications like motor drives and inverters, it integrates fast switching and low conduction losses.
Manufacturer
The NCE65T360F is a power MOSFET manufactured by Nexperia, a leading semiconductor company specializing in high-performance discrete, logic, and MOSFET devices.
Nexperia, originally a division of NXP Semiconductors, became independent in 2017 and is headquartered in Nijmegen, Netherlands. The company focuses on efficiency, reliability, and miniaturization, serving industries like automotive, industrial, and consumer electronics.
The NCE65T360F is part of their automotive-grade MOSFET lineup, designed for high-power applications such as motor control and power supplies. Nexperia is known for its stringent quality standards, making it a trusted supplier for demanding applications.
Nexperia, originally a division of NXP Semiconductors, became independent in 2017 and is headquartered in Nijmegen, Netherlands. The company focuses on efficiency, reliability, and miniaturization, serving industries like automotive, industrial, and consumer electronics.
The NCE65T360F is part of their automotive-grade MOSFET lineup, designed for high-power applications such as motor control and power supplies. Nexperia is known for its stringent quality standards, making it a trusted supplier for demanding applications.
Package
The NCE65T360F is a surface-mount power inductor from Taiyo Yuden, designed for high-current applications. It features a shielded construction to minimize EMI, with a 6.5x6.5mm footprint and 3.6µH inductance. Its low DC resistance (DCR) and high saturation current make it suitable for power supplies, DC-DC converters, and automotive electronics. Package type: SMD (reel packaging for automated assembly).
