圖片僅供參考
規格
| 屬性 | 價值 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOIC-8 |
| OperatingTemperature | -55℃~+150℃ |
| Current-ContinuousDrain(Id) | 12A |
| Pd-PowerDissipation | 3W |
| DraintoSourceVoltage | 30V |
| RDS(on) | 25mΩ@4.5V,7A |
| GateThresholdVoltage(Vgs(th)@Id) | 1.5V |
| Type | 1 piece P-channel |
| GateCharge(Qg) | 24nC |
| ReverseTransferCapacitance(Crss@Vds) | 180pF |
概述
Description
The NCE30P12S is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): Typically 12mΩ (at VGS=10V)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and battery management.
- Package: TO-252 (DPAK), suitable for surface-mount applications.
Ideal for automotive, industrial, and consumer electronics, the NCE30P12S offers robust thermal performance and reliability. Its low gate charge enhances switching efficiency, making it suitable for high-frequency applications.
For detailed specifications, refer to the manufacturer’s datasheet.
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): Typically 12mΩ (at VGS=10V)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and battery management.
- Package: TO-252 (DPAK), suitable for surface-mount applications.
Ideal for automotive, industrial, and consumer electronics, the NCE30P12S offers robust thermal performance and reliability. Its low gate charge enhances switching efficiency, making it suitable for high-frequency applications.
For detailed specifications, refer to the manufacturer’s datasheet.
Equivalent
The NCE30P12S is a 30V, 12A P-channel MOSFET. Equivalent alternatives include:
- Infineon IPD90P04P4L-04 (40V, 12A)
- Vishay Si7469DP (30V, 12A)
- ON Semiconductor NVTFS5121PL (30V, 12A)
- STMicroelectronics STP12PF06 (60V, 12A)
Check datasheets for exact compatibility in your application.
- Infineon IPD90P04P4L-04 (40V, 12A)
- Vishay Si7469DP (30V, 12A)
- ON Semiconductor NVTFS5121PL (30V, 12A)
- STMicroelectronics STP12PF06 (60V, 12A)
Check datasheets for exact compatibility in your application.
Features
The NCE30P12S is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): Typically 12mΩ (at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching speed and reduces losses
- Avalanche Energy Rated: Improves reliability in rugged conditions
- Package: TO-252 (DPAK), suitable for surface-mount applications
- Applications: Power management, DC-DC converters, motor control, and battery protection
Designed for efficiency and robustness, it is ideal for high-current, low-voltage systems.
- Voltage Rating: 30V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): Typically 12mΩ (at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching speed and reduces losses
- Avalanche Energy Rated: Improves reliability in rugged conditions
- Package: TO-252 (DPAK), suitable for surface-mount applications
- Applications: Power management, DC-DC converters, motor control, and battery protection
Designed for efficiency and robustness, it is ideal for high-current, low-voltage systems.
Manufacturer
The NCE30P12S is a power MOSFET manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. They serve industries like automotive, industrial, and consumer electronics, focusing on innovation and sustainability.
The NCE30P12S is a 30V P-channel MOSFET designed for high-efficiency power applications.
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. They serve industries like automotive, industrial, and consumer electronics, focusing on innovation and sustainability.
The NCE30P12S is a 30V P-channel MOSFET designed for high-efficiency power applications.
Package
The NCE30P12S is a 30A, 1200V N-channel silicon carbide (SiC) MOSFET in a TO-247-3 package. This package type is a through-hole, three-lead design commonly used for high-power applications, offering good thermal performance and ease of mounting. It's suitable for high-voltage, high-frequency switching in power electronics like inverters and converters.
