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NAND256W3A2BN6E

+物料清單

IC FLASH 256MBIT PARALLEL 48TSOP

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製造商部分 #NAND256W3A2BN6E
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規格

屬性	價值
PartStatus	Obsolete
BaseProductNumber	NAND256
DigiKeyProgrammable	Not Verified
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND
MemorySize	256Mbit
MemoryOrganization	32M x 8
MemoryInterface	Parallel
WriteCycleTime-Word,Page	50ns
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package	48-TFSOP (0.724", 18.40mm Width)
SupplierDevicePackage	48-TSOP
Packaging	Tray
AccessTime	50 ns

概述

Description

The NAND256W3A2BN6E is a 256Mb (32MB) NAND Flash memory device produced by Micron Technology. It is designed for high-density data storage applications, commonly used in consumer electronics, mobile devices, and industrial applications. Key features include a 3V operating voltage, a high-speed interface, and support for various programming and erasing modes, which enhance performance and reliability.
This NAND Flash uses a page size of 8KB and supports read, program, and erase operations, making it suitable for applications that require efficient data management. It is built on advanced NAND technology, ensuring durability and longevity through multiple program/erase cycles.
The device is offered in a compact form factor, facilitating easy integration into various systems. Its architecture allows for greater data integrity and error management capabilities. Overall, the NAND256W3A2BN6E is ideal for applications that demand high performance and extensive storage capabilities in a reliable and compact package.

Equivalent

The NAND256W3A2BN6E chip is a 256Mb NAND flash memory. Equivalent products include the Micron MT29F256G08CBABA and the Samsung K9GAG08U0M. Other alternatives might be the Toshiba TC58NVG3S0HBAI4 and the Winbond W29N01GV. When substituting, ensure compatibility in pin configuration, voltage levels, and memory organization.

Features

The NAND256W3A2BN6E is a 256Mb (32MB) serial NAND flash memory device featuring a 2.7V to 3.6V operating voltage range. It uses a SPI (Serial Peripheral Interface) for communication, making it suitable for a variety of applications, including consumer electronics and industrial devices. Key features include:
- Density: 256 Megabits (32 Mega Bytes).
- Interface: SPI (Single, Dual, and Quad modes).
- Speed: Fast read speeds up to 104 MHz.
- Endurance: Supports up to 100,000 program/erase cycles.
- Data Retention: Typically retains data for more than 20 years.
- Package Options: Available in various packages, including WSON and SOIC.
- Power Efficiency: Low power consumption in active and standby modes.
- Security: Supports features like write protection and secure erase.
This device is ideal for applications needing reliable, high-capacity storage with efficient data transfer capabilities.

Pinout

The NAND256W3A2BN6E is a 256Mb (32MB) NAND Flash memory device with a total of 48 pins. Its primary functions include data storage, program, and erase operations. The key pin functions include:
1. CE# (Chip Enable): Activates the device for communication.
2. WE# (Write Enable): Controls write operations.
3. RE# (Read Enable): Controls read operations.
4. ALE (Address Latch Enable): Latches the address for command execution.
5. CLE (Command Latch Enable): Latches command inputs.
6. DQ0-DQ7: Data input/output pins for transferring data.
7. WP# (Write Protect): Prevents write operations when asserted.
8. RB# (Ready/Busy): Indicates the status of the device (ready or busy).
9. VCC: Power supply.
10. VSS: Ground.
This device is commonly used in consumer electronics, automotive applications, and industrial solutions for its non-volatile storage capabilities.

Manufacturer

The manufacturer of the NAND256W3A2BN6E is Micron Technology, Inc. Micron is a leading American company that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including consumer electronics, computing, networking, and automotive.
Micron’s NAND256W3A2BN6E is a NAND flash memory chip that is commonly used in various applications, such as mobile devices, solid-state drives (SSDs), and embedded systems. The company is known for its innovation in memory technologies and focuses on developing high-performance, reliable, and cost-effective memory solutions to meet the demands of modern computing and data storage needs. Micron plays a critical role in the semiconductor industry, contributing to advancements in technology and enabling the functionality of numerous digital devices.

Application

The NAND256W3A2BN6E is a 256Mb NAND flash memory chip commonly used in various applications including:
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Embedded Systems: Ideal for industrial applications, automotive electronics, and IoT devices.
3. Data Storage Solutions: Employed in USB drives, SSDs, and memory cards for enhanced storage capabilities.
4. Firmware and Application Storage: Supports booting and firmware updates in devices requiring flash memory.
Its compact size and high performance make it suitable for applications needing reliable non-volatile storage.

Package

The NAND256W3A2BN6E is packaged in a TSOP (Thin Small Outline Package) form factor, specifically TSOP-48. This type of package is designed for surface mounting on printed circuit boards and provides a compact form for memory applications.

Frequently Asked Questions

Q: What is the memory size and organization of the NAND256W3A2BN6E?
A: It has a 256Mbit capacity organized as 32M x 8 bits, suitable for high-density parallel NAND Flash applications.

Q: What is the operating voltage range for this component?
A: The voltage supply range is 2.7V to 3.6V, making it compatible with standard 3.3V systems.

Q: Is this component still in active production?
A: No, the Part Status is marked as Obsolete. It is recommended for legacy designs or replacement needs only.

Q: What is the access time and write cycle time for page operations?
A: The access time is 50 ns, and the write cycle time per word or page is also 50 ns.

Q: What is the operating temperature range for this NAND Flash?
A: It operates from -40°C to 85°C (TA), supporting industrial temperature applications.

Q: Over what interface does this memory communicate?
A: It uses a Parallel memory interface, typical for NAND Flash in embedded systems.

Q: What package type is the NAND256W3A2BN6E available in?
A: It is supplied in a 48-TFSOP package (18.40mm Width), surface mount, with a 48-TSOP supplier device package.