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MX25UW51245GXDR00
+物料清單IC FLASH 512MBIT SPI/QU 24CSPBGA
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製造商部分 #MX25UW51245GXDR00
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有存貨4705
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規格
| 屬性 | 價值 |
| Series | MXSMIO™ |
| PartStatus | Active |
| BaseProductNumber | MX25UW51245 |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR (SLC) |
| MemorySize | 512Mbit |
| MemoryOrganization | 64M x 8, 512M x 1 |
| MemoryInterface | SPI - Octal I/O |
| ClockFrequency | 200 MHz |
| WriteCycleTime-Word,Page | 4ms |
| Voltage-Supply | 1.7V ~ 2V |
| OperatingTemperature | -40°C ~ 105°C (TA) |
| MountingType | Surface Mount |
| Package | 24-TBGA, CSPBGA |
| SupplierDevicePackage | 24-CSPBGA (6x8) |
| Packaging | Tray |
| AccessTime | 4.55 ns |
| Grade | Automotive |
| Qualification | AEC-Q100 |
概述
Description
Key features include a fast read speed of up to 104 MHz and support for multiple operations such as fast read, page program, and sector erase. The chip also includes an efficient power management system, providing low power consumption during operation and standby modes. Its endurance is rated for up to 100,000 program/erase cycles, with data retention of up to 20 years.
The MX25UW51245GXDR00 is ideal for applications requiring reliable, high-density memory storage, such as firmware storage, boot code, and data logging. Its compact form factor and robust performance make it a popular choice among engineers and designers.
Equivalent
1. Winbond W25Q512JV - 512Mb SPI NOR Flash
2. Micron MT25QL512ABA - 512Mb NOR Flash
3. Adesto Technologies AT25SF512A - 512Mb Serial Flash
These alternatives may vary in specifications such as speed and interface, so ensure compatibility with your application before substitution.
Features
1. Interface: Supports Quad SPI (QSPI), allowing for high-speed data transfer.
2. Voltage Range: Operates between 2.7V to 3.6V, making it versatile for different power environments.
3. Speed: Offers fast read speeds up to 133 MHz, enhancing performance in data-intensive applications.
4. Endurance and Retention: Endurance of 100,000 program/erase cycles and data retention of up to 20 years at 25°C.
5. Architecture: Supports uniform 4KB sectors and has a rapid erase capability.
6. Security: Features one-time programmable (OTP) and hardware and software protection mechanisms.
7. Package: Available in various packages, including WSON and SOP, optimizing for space-constrained designs.
These features make the MX25UW51245GXDR00 suitable for automotive, industrial, and consumer electronics applications.
Pinout
1. SO (Serial Output) - Data output.
2. SI (Serial Input) - Data input.
3. SCK (Serial Clock) - Clock signal for synchronous data transfer.
4. CS (Chip Select) - Selects the chip for communication.
5. VCC - Power supply (typically 3V to 3.6V).
6. GND - Ground.
7. Wp (Write Protect) - Write protection control.
8. HOLD - Pauses serial communication.
The device supports various commands for reading, writing, and erasing data, including standard and dual/quad SPI modes, enabling high-speed data transfers.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MX25UW51245GXDR00?
A: It has a 512Mbit density, organized as 64M x 8 or 512M x 1, suitable for high-density code or data storage.
Q: What interface does this NOR Flash use for high-speed data transfer?
A: It features a SPI Octal I/O interface, supporting a 200 MHz clock frequency for fast read and write operations.
Q: What is the operating voltage range for this component?
A: The supply voltage ranges from 1.7V to 2.0V, enabling low-power operation in portable and automotive systems.
Q: Is this device qualified for automotive applications?
A: Yes, it is AEC-Q100 qualified and rated for an operating temperature range of -40°C to 105°C, suitable for automotive environments.
Q: What is the typical page write cycle time for this memory?
A: The write cycle time is 4ms per page (typical), ensuring reliable programming for code and parameter storage.
Q: What package options are available for this part?
A: It comes in a 24-TBGA or CSPBGA package, with a supplier device package size of 24-CSPBGA (6x8 mm).
Q: How does this Flash memory handle read access speed?
A: It offers a fast access time of 4.55 ns, enabling low-latency random read operations critical for real-time applications.