規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified(Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
| Mounting Type | Surface Mount |
| Supplier Device Package | SMA |
概述
Description
The MURA110T3G is a Schottky barrier diode from ON Semiconductor, designed for high-efficiency rectification in low-voltage, high-frequency applications. Key features include:
- Low forward voltage drop (VF): Enhances power efficiency.
- High current capability: Up to 1A average forward current.
- Fast switching: Ideal for switching power supplies and DC-DC converters.
- Small form factor: SOD-123 package for space-constrained designs.
Common uses include reverse polarity protection, freewheeling diodes, and voltage clamping in portable electronics, automotive systems, and power management circuits.
Specs (typical):
- VF: 0.38V @ 1A
- Reverse voltage (VR): 30V
- Operating temperature: -65°C to +125°C
A cost-effective, reliable choice for energy-sensitive designs.
- Low forward voltage drop (VF): Enhances power efficiency.
- High current capability: Up to 1A average forward current.
- Fast switching: Ideal for switching power supplies and DC-DC converters.
- Small form factor: SOD-123 package for space-constrained designs.
Common uses include reverse polarity protection, freewheeling diodes, and voltage clamping in portable electronics, automotive systems, and power management circuits.
Specs (typical):
- VF: 0.38V @ 1A
- Reverse voltage (VR): 30V
- Operating temperature: -65°C to +125°C
A cost-effective, reliable choice for energy-sensitive designs.
Features
The MURA110T3G is a Schottky barrier diode with the following key features:
- Low Forward Voltage Drop (VF): Typically 0.38V at 1A, improving efficiency.
- High Current Capability: Rated for 1A average forward current.
- Fast Switching: Schottky design ensures minimal reverse recovery time.
- Low Leakage Current: <100µA at 25°C, enhancing power efficiency.
- High Surge Current Tolerance: Supports up to 30A (non-repetitive).
- Compact Package: SOD-123FL, suitable for space-constrained designs.
- Wide Operating Temperature Range: -65°C to +125°C.
Ideal for power rectification, DC-DC converters, and reverse polarity protection.
- Low Forward Voltage Drop (VF): Typically 0.38V at 1A, improving efficiency.
- High Current Capability: Rated for 1A average forward current.
- Fast Switching: Schottky design ensures minimal reverse recovery time.
- Low Leakage Current: <100µA at 25°C, enhancing power efficiency.
- High Surge Current Tolerance: Supports up to 30A (non-repetitive).
- Compact Package: SOD-123FL, suitable for space-constrained designs.
- Wide Operating Temperature Range: -65°C to +125°C.
Ideal for power rectification, DC-DC converters, and reverse polarity protection.
Pinout
The MURA110T3G is a 3-pin Schottky barrier diode in a SOD-123FL package.
Pin Functions:
1. Anode (A) – Positive terminal.
2. Cathode (K) – Negative terminal.
3. No Connection (NC) – Unused pin for mechanical stability.
Key Features:
- Low forward voltage drop (~0.38V at 1A).
- High current capability (1A average forward current).
- Fast switching for efficiency in power applications.
Commonly used in rectification, power supplies, and protection circuits.
Pin Functions:
1. Anode (A) – Positive terminal.
2. Cathode (K) – Negative terminal.
3. No Connection (NC) – Unused pin for mechanical stability.
Key Features:
- Low forward voltage drop (~0.38V at 1A).
- High current capability (1A average forward current).
- Fast switching for efficiency in power applications.
Commonly used in rectification, power supplies, and protection circuits.
Manufacturer
The MURA110T3G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient technologies.
The MURA110T3G is a surface-mount Schottky barrier diode, commonly used for high-efficiency rectification in circuits.
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient technologies.
The MURA110T3G is a surface-mount Schottky barrier diode, commonly used for high-efficiency rectification in circuits.
Application
The MURA110T3G is a Schottky barrier diode commonly used in:
1. Power Supplies – For rectification in switching regulators and DC-DC converters.
2. Reverse Polarity Protection – Safeguarding circuits from voltage spikes.
3. High-Frequency Applications – Due to its fast switching and low forward voltage drop.
4. Solar Panels & Battery Chargers – Preventing reverse current flow.
5. Automotive Electronics – Used in alternators and power management systems.
Its efficiency and reliability make it suitable for compact, high-performance circuits.
1. Power Supplies – For rectification in switching regulators and DC-DC converters.
2. Reverse Polarity Protection – Safeguarding circuits from voltage spikes.
3. High-Frequency Applications – Due to its fast switching and low forward voltage drop.
4. Solar Panels & Battery Chargers – Preventing reverse current flow.
5. Automotive Electronics – Used in alternators and power management systems.
Its efficiency and reliability make it suitable for compact, high-performance circuits.
Package
The MURA110T3G is a Schottky barrier diode in a SOD-123FL surface-mount package. This compact, lead-free package is designed for high-efficiency rectification in low-voltage, high-frequency applications. Its small footprint (approx. 2.7mm x 1.6mm) suits space-constrained PCBs. The SOD-123FL offers good thermal performance and is compliant with RoHS standards.
