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MT48LC4M32B2P-7:G
+物料清單IC DRAM 128MBIT PAR 86TSOP II
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製造商美光科技股份有限公司。
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製造商部分 #MT48LC4M32B2P-7:G
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規格
| 屬性 | 價值 |
| Part Status | Obsolete |
| Base Product Number | MT48LC4M32B2 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 4M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Write Cycle Time - Word, Page | 14ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 86-TFSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 86-TSOP II |
| Packaging | Tray |
| Access Time | 5.5 ns |
概述
Description
Key features of the MT48LC4M32B2P-7:G include a clock speed of 143 MHz, a CAS latency of 3 cycles, and a voltage range of 3.0V to 3.6V. The component supports burst lengths of 1, 2, 4, 8, and a full-page, and operates with a sequential or interleaved burst type. Its interface is synchronous, meaning all signals are registered on the positive edge of the clock signal.
The SDRAM is packaged in a 86-pin TSOP (Thin Small Outline Package) type II, which is compact and suitable for surface mounting on PCBs. Its design incorporates power-saving features and self-refresh options, which are critical for managing power consumption in various electronic devices.
Equivalent
1. K4S561632E-TC: Samsung's 128Mb SDRAM.
2. IS42S32800F: ISSI's 128Mb SDRAM.
3. HY57V641620ET: Hynix's 128Mb SDRAM.
These equivalents share similar specifications such as size, configuration, and speed, but always check the specific datasheets for compatibility.
Features
1. Capacity & Organization: 128 megabits organized as 4M x 32 bits.
2. Speed: Operates with a clock frequency up to 143 MHz with a CAS (Column Address Strobe) latency of 3.
3. Package: Available in a 86-pin TSOP (Thin Small Outline Package).
4. Voltage: Operates at a standard power supply voltage of 3.3V.
5. Data Transfer: Supports burst lengths of 1, 2, 4, 8, or full-page for flexible data transfers.
6. Auto-Refresh: Supports self-refresh and auto-refresh modes to maintain data integrity.
7. Interface: Synchronous interface for high-speed operation.
8. Temperature Range: Available in commercial and industrial temperature ranges, suitable for various applications.
9. Serial Presence-Detect (SPD): Includes an on-chip EEPROM for configuration data.
This SDRAM is commonly used in applications requiring high-density memory with fast access times, such as in computing and telecommunications equipment.
Pinout
Manufacturer
Application
1. Consumer Electronics: In devices like digital cameras, camcorders, and set-top boxes, it provides efficient memory solutions for data storage and processing tasks.
2. Networking Equipment: Utilized in routers and switches for buffering and caching data to enhance network performance.
3. Industrial Systems: Implemented in control systems and automation equipment for reliable data management.
4. Computing Devices: Used in printers and other peripheral devices for enhanced processing and spooling functions.
5. Embedded Systems: Provides memory solutions for embedded applications in automotive and medical devices, supporting real-time data processing needs.
Package
Frequently Asked Questions
Q: What is the memory size and organization of this DRAM?
A: The MT48LC4M32B2P-7 offers 128Mbit of memory, organized as 4M words x 32 bits, making it ideal for 32-bit parallel data bus applications.
Q: What is the maximum clock frequency supported?
A: This SDRAM supports a clock frequency of up to 143 MHz, allowing for high-speed data transfers in synchronous memory systems.
Q: Is this component suitable for surface-mount assembly?
A: Yes, it features a surface-mount package and is supplied as an 86-TSOP II (10.16mm width) device, compatible with standard reflow soldering processes.
Q: What is the access time for this device?
A: The access time is 5.5 ns, ensuring quick data retrieval for read operations under specified voltage and timing conditions.
Q: What is the supply voltage range required?
A: It operates with a standard 3.3V supply, accepting a range from 3.0V to 3.6V, which fits common 3.3V logic systems.
Q: What is the write cycle time for page or word operations?
A: The write cycle time is 14 ns per word or page, ensuring efficient memory write operations within the SDRAM's timing constraints.