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MT48LC16M8A2BB-6A:L
+物料清單IC DRAM 128MBIT PAR 60FBGA
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製造商部分 #MT48LC16M8A2BB-6A:L
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規格
| 屬性 | 價值 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 12ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-FBGA |
| Supplier Device Package | 60-FBGA (8x16) |
| Base Product Number | MT48LC16M8A2 |
| Clock Frequency | 167 MHz |
| Access Time | 5.4 ns |
概述
Description
This chip is commonly used in various applications, including computers, networking equipment, and consumer electronics, due to its speed and efficiency. It supports multiple bank operations, which enhance performance by allowing simultaneous access to different memory banks. The MT48LC16M8A2BB-6A is compatible with common SDRAM interfaces and adheres to JEDEC standards, making it versatile for integration into various systems.
In summary, it’s a high-speed, reliable memory solution suitable for a wide range of electronic applications.
Equivalent
1. Micron MT48LC16M8A2P-6A
2. Hynix HY57V281620BPG-6
3. Samsung K4S641632H-6
4. Nanya NT5SB128M8DN-6
Always verify compatibility with your specific application and requirements.
Features
1. Density: 128Mb (16M x 8)
2. Organization: 8-bit wide data I/O.
3. Access Time: 6 ns.
4. Voltage: Operates at a 2.5V core voltage.
5. Package Type: Offered in a 54-ball TSOPII package.
6. Refresh: Supports standard DRAM refresh requirements.
7. Speed: Designed for high-speed applications with low power consumption.
8. Compatibility: Works well in various applications including memory modules for computers and other electronic devices.
This chip is ideal for applications requiring efficient performance and reliability in memory storage.
Pinout
Key functions include:
- Data Input/Output (DQ0-DQ7): 8-bit data bus for read and write operations.
- Address Lines (A0-A19): Used to access specific memory locations.
- Control Signals: Includes chip select (CS), write enable (WE), read enable (OE), and other control signals to manage memory operations.
- Power Supply Pins (VDD, VSS): For power and ground connections.
- Refresh and other necessary signals: To maintain data integrity.
This memory device is commonly used in applications requiring reliable and efficient data storage, such as in computing and consumer electronics.
Manufacturer
Application
1. Consumer Electronics: TVs, digital cameras, and gaming consoles.
2. Computers: Laptops and desktops for enhancing memory capacity.
3. Networking Equipment: Routers and switches for data processing.
4. Embedded Systems: Industrial control systems and medical devices.
5. Telecommunications: Base stations and mobile devices for improved performance.
6. Automotive Applications: In-car infotainment and advanced driver-assistance systems (ADAS).
Its high speed and efficiency make it suitable for data-intensive tasks across these domains.