規格
| 屬性 | 價值 |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
概述
Description
MT47H64M8CF-25E:G is a Micron memory IC (from the MT47H64M8CF family). It provides 64M x 8 organization, i.e., 512 Mbits of memory on a single die. It is a DDR3 SDRAM device (no ECC) designed for system memory use, typically operating at ~1.5V I/O. The -25E speed grade indicates a specific maximum data-rate per the JEDEC spec, with a multi-bank organization (commonly 8 banks) and standard DDR3 timing features (burst access, precharge, refresh, etc.). The “G” suffix denotes RoHS compliance; packaging is a compact FBGA. Applications include mobile/embedded memory, graphics/card memory, and small form-factor DIMMs. For exact timings, voltage, bank counts, and package details, refer to the Micron MT47H64M8CF-25E:G datasheet.
Features
MT47H64M8CF-25E:G is a Micron MT47H family SDRAM device. Key features:
- 64M × 8 organization (512 Mbit total)
- Synchronous DRAM (SDRAM) with JEDEC-compatible timings
- Multi-bank architecture (typical 8 banks)
- Burst mode support (BL4/BL8) and page mode access
- 8-bit data I/O (x8 bus)
- Auto-refresh and self-refresh
- Pb-free RoHS-compliant (G suffix)
Note: exact operating voltage, speed grade, and timing parameters depend on the specific variant; check the datasheet for your lot.
- 64M × 8 organization (512 Mbit total)
- Synchronous DRAM (SDRAM) with JEDEC-compatible timings
- Multi-bank architecture (typical 8 banks)
- Burst mode support (BL4/BL8) and page mode access
- 8-bit data I/O (x8 bus)
- Auto-refresh and self-refresh
- Pb-free RoHS-compliant (G suffix)
Note: exact operating voltage, speed grade, and timing parameters depend on the specific variant; check the datasheet for your lot.
Pinout
Pin count: 54 pins (TSOP-II package).
Function: 64M × 8 dynamic RAM (512 Mbit total) with an 8-bit data bus. It is a synchronous SDRAM memory device, using standard SDRAM signals (RAS, CAS, WE, CS, BA[1:0], A[0:12], DQ[7:0], DQM[1:0], CK/CK#, CKE, etc.).
Function: 64M × 8 dynamic RAM (512 Mbit total) with an 8-bit data bus. It is a synchronous SDRAM memory device, using standard SDRAM signals (RAS, CAS, WE, CS, BA[1:0], A[0:12], DQ[7:0], DQM[1:0], CK/CK#, CKE, etc.).
Manufacturer
Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, and related memory products).
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, and related memory products).
Application
MT47H64M8CF-25E:G is a 64-Mbit × 8-bit DDR2 SDRAM device. Typical application areas include:
- Main system memory for desktops and notebooks (DDR2 modules)
- Embedded systems requiring DRAM (industrial, telecom, consumer electronics)
- Networking equipment (routers, switches, line cards)
- Storage/controllers and digital home devices (set-top boxes, DVRs, media players)
- Industrial/automotive applications with board-level memory needs
- Main system memory for desktops and notebooks (DDR2 modules)
- Embedded systems requiring DRAM (industrial, telecom, consumer electronics)
- Networking equipment (routers, switches, line cards)
- Storage/controllers and digital home devices (set-top boxes, DVRs, media players)
- Industrial/automotive applications with board-level memory needs
Package
Package type: FBGA (Fine-pitch Ball Grid Array). The -G suffix indicates RoHS-compliant (lead-free) packaging.
