規格
| 屬性 | 價值 |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gb (256M x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
概述
Description
MT47H256M4CF-25E:H is a Micron DRAM device. It stores 256 megabits of data and uses a 4-bit-wide data interface (x4). It’s a high-speed, multi-bank, synchronous DRAM designed for embedded/mobile applications, with standard DRAM commands (CS, RAS, CAS, WE), auto-refresh, and row/column addressing. The MT47H family targets low power and high density for compact systems such as tablets, embedded devices, and other consumer electronics. The suffixes “25E” indicate its speed grade, while “:H” denotes specific packaging/temperature options. For exact electrical characteristics (voltage, timing, organization, and pinout), consult the Micron datasheet.
Equivalent
MT47H256M4CF-25E:H is Micron’s 1 Gbit (256M x 4) mobile DDR/LPDDR2 device, speed grade -25E. There is no public exact cross‑reference. To find equivalents, use Micron’s cross‑reference tool or contact suppliers with the specs: 1 Gbit, x4, DDR2/LPDDR2, voltage and timing (e.g., 1.8 V). Similar parts from Samsung/Hynix/Nanya exist but must be verified for pinout/packaging; no guaranteed 1:1 drop‑in cross.
Features
MT47H256M4CF-25E:H Features (concise):
- 256 Mb total memory
- x4 data width (4-bit I/O per device)
- Mobile/low-power DRAM (LPDDR2-type family) with low-voltage operation
- 1.8 V nominal I/O supply
- Synchronous interface with DQS; burst length 4
- 8 banks; auto/self-refresh and partial-array refresh
- Deep sleep/power-down modes for low standby power
- Wide operating temperature range suitable for consumer/industrial apps
Note: exact speed grade and timing values are device-specific (refer to datasheet for timings).
- 256 Mb total memory
- x4 data width (4-bit I/O per device)
- Mobile/low-power DRAM (LPDDR2-type family) with low-voltage operation
- 1.8 V nominal I/O supply
- Synchronous interface with DQS; burst length 4
- 8 banks; auto/self-refresh and partial-array refresh
- Deep sleep/power-down modes for low standby power
- Wide operating temperature range suitable for consumer/industrial apps
Note: exact speed grade and timing values are device-specific (refer to datasheet for timings).
Pinout
- Pin count: Packaging dependent; the common Micron MT47H256M4CF-25E:H device is offered in a 60-ball FBGA/LFBGA variant (other packages may exist).
- Function: 256‑Mbit Mobile DDR SDRAM with x4 data width. It provides a synchronous, banked memory interface (CK/CK̅, CS̅, RAS̅, CAS̅, WE̅, A[0:10], BA[0:1], DQ[3:0], DQS, DM, etc.) for main system memory with low‑power operation.
- Function: 256‑Mbit Mobile DDR SDRAM with x4 data width. It provides a synchronous, banked memory interface (CK/CK̅, CS̅, RAS̅, CAS̅, WE̅, A[0:10], BA[0:1], DQ[3:0], DQS, DM, etc.) for main system memory with low‑power operation.
Manufacturer
- Manufacturer: Micron Technology, Inc. (Micron)
- Company type: American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, SSDs); an integrated device manufacturer with in-house fabrication.
- Company type: American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, SSDs); an integrated device manufacturer with in-house fabrication.
Application
MT47H256M4CF-25E:H is Micron’s 1-Gb SDRAM device (256M × 4) used as high-density, low-power memory in multi-chip memory systems. Typical applications include:
- Mobile and embedded platforms (handhelds, tablets, cameras)
- Consumer electronics (set-top boxes, TVs, Blu-ray players, game consoles)
- Networking/telecom equipment (routers, switches)
- Automotive infotainment and instrument clusters
- Industrial and medical devices requiring fast local memory
- Graphics/display subsystems as memory/buffers
These devices are chosen for high density in compact form factors and wide portability across systems.
- Mobile and embedded platforms (handhelds, tablets, cameras)
- Consumer electronics (set-top boxes, TVs, Blu-ray players, game consoles)
- Networking/telecom equipment (routers, switches)
- Automotive infotainment and instrument clusters
- Industrial and medical devices requiring fast local memory
- Graphics/display subsystems as memory/buffers
These devices are chosen for high density in compact form factors and wide portability across systems.
Package
FBGA package (Pb-free, Micron-standard ball-grid array).
