規格
| 屬性 | 價值 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
MT46H16M16LFBF-6:H? is a Micron DDR2 SDRAM device. Key points:
- Capacity/organization: 256‑Mbit total, organized as 16M × 16 (16 data bits wide).
- Interface/voltage: DDR2 memory with a 1.8V supply; requires a DDR2 memory controller.
- Speed grade: -6 indicates a higher-speed DDR2 part (approximately DDR2‑667, i.e., around 667 MT/s).
- Package/grade: LFBF denotes a lead‑free, RoHS-compliant FBGA package; the “H”/“6:H?” suffixes refer to temperature/packaging variations—exact details are in the datasheet.
- Features: multi-bank DDR2 SDRAM, standard refresh modes, ZQ calibration, etc.
- Use: common in embedded systems or memory modules needing 256 Mb of density and 16‑bit data width.
Note: exact timings (tRCD, tRP, tCAS), bank count, and electrical specifics vary by revision. For precise specs, consult the MT46H16M16LFBF-6:H? datasheet from Micron.
- Capacity/organization: 256‑Mbit total, organized as 16M × 16 (16 data bits wide).
- Interface/voltage: DDR2 memory with a 1.8V supply; requires a DDR2 memory controller.
- Speed grade: -6 indicates a higher-speed DDR2 part (approximately DDR2‑667, i.e., around 667 MT/s).
- Package/grade: LFBF denotes a lead‑free, RoHS-compliant FBGA package; the “H”/“6:H?” suffixes refer to temperature/packaging variations—exact details are in the datasheet.
- Features: multi-bank DDR2 SDRAM, standard refresh modes, ZQ calibration, etc.
- Use: common in embedded systems or memory modules needing 256 Mb of density and 16‑bit data width.
Note: exact timings (tRCD, tRP, tCAS), bank count, and electrical specifics vary by revision. For precise specs, consult the MT46H16M16LFBF-6:H? datasheet from Micron.
Equivalent
I can provide exact equivalents, but I need the target package and speed grade. MT46H16M16LFBF-6:H is a Micron DDR3 SDRAM: 256 Mb total (16M × 16) in an FBGA package, speed grade -6. Do you want cross-references from SK hynix, Samsung, Nanya, etc.? If yes, I’ll fetch the exact equivalent part numbers.
Features
MT46H16M16LFBF-6:H is a Micron mobile memory device. Key features:
- Type: Mobile DDR2 SDRAM
- Organization: 16M x 16 (256 Mbit total)
- Voltage: 1.8V supply
- Banks: 4 banks
- Speed grade: -6 (up to ~533 MT/s, DDR2-1066)
- Interface: Fully synchronous DDR2 with address/command inputs and data bus
- Power‑saving: Deep power-down, partial array self-refresh
- Other features: ZQ calibration, on-die termination/ODT, DLL, standard refresh control
- Package: FBGA, lead-free (LF/BF variant)
Note: exact timing and options depend on the datasheet for MT46H16M16LFBF-6:H. For precise specs, consult Micron’s datasheet.
- Type: Mobile DDR2 SDRAM
- Organization: 16M x 16 (256 Mbit total)
- Voltage: 1.8V supply
- Banks: 4 banks
- Speed grade: -6 (up to ~533 MT/s, DDR2-1066)
- Interface: Fully synchronous DDR2 with address/command inputs and data bus
- Power‑saving: Deep power-down, partial array self-refresh
- Other features: ZQ calibration, on-die termination/ODT, DLL, standard refresh control
- Package: FBGA, lead-free (LF/BF variant)
Note: exact timing and options depend on the datasheet for MT46H16M16LFBF-6:H. For precise specs, consult Micron’s datasheet.
Pinout
- Pin count: 84-ball FBGA package (84 pins).
- Function: 256-Mbit Mobile DDR2 SDRAM organized 16M × 16. I/O interface includes:
- Data: DQ[15:0] with DQS/DQS# strobes
- Address/Command: A[...], BA[1:0]
- Control: CS#, RAS#, CAS#, WE#, CKE, ODT
- Clock: CK and CK#
- Power/ground: VDD (core), VDDQ (I/O), VSS
- Reference/Calibration: VREF (I/O reference), ZQ (calibration, if present)
Notes:
- Exact pinout (which pins map to which signals) depends on the specific package variant; consult the MT46H16M16LFBF-6:H datasheet for the precise 84-pin FBGA pinout and timing.
- Function: 256-Mbit Mobile DDR2 SDRAM organized 16M × 16. I/O interface includes:
- Data: DQ[15:0] with DQS/DQS# strobes
- Address/Command: A[...], BA[1:0]
- Control: CS#, RAS#, CAS#, WE#, CKE, ODT
- Clock: CK and CK#
- Power/ground: VDD (core), VDDQ (I/O), VSS
- Reference/Calibration: VREF (I/O reference), ZQ (calibration, if present)
Notes:
- Exact pinout (which pins map to which signals) depends on the specific package variant; consult the MT46H16M16LFBF-6:H datasheet for the precise 84-pin FBGA pinout and timing.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- Kind of company: An American multinational semiconductor company that designs and manufactures memory products (DRAM, NAND Flash, and storage solutions). It’s one of the world's largest memory chip makers, headquartered in Boise, Idaho (publicly traded on NASDAQ as MU).
- Kind of company: An American multinational semiconductor company that designs and manufactures memory products (DRAM, NAND Flash, and storage solutions). It’s one of the world's largest memory chip makers, headquartered in Boise, Idaho (publicly traded on NASDAQ as MU).
Application
MT46H16M16LFBF-6:H is a 16M×16 high-speed SDRAM. Typical application areas include:
- Embedded and consumer electronics (set-top boxes, DVD/Blu-ray players, printers, cameras)
- Graphics/display memory (frame buffers, display controllers)
- Telecom, networking, and industrial control equipment
- Automotive infotainment and instrument clusters
- Any system requiring a compact, moderate-density SDRAM as main memory or cache
Note: exact temperature and packaging variants may optimize suitability for automotive or mobile environments.
- Embedded and consumer electronics (set-top boxes, DVD/Blu-ray players, printers, cameras)
- Graphics/display memory (frame buffers, display controllers)
- Telecom, networking, and industrial control equipment
- Automotive infotainment and instrument clusters
- Any system requiring a compact, moderate-density SDRAM as main memory or cache
Note: exact temperature and packaging variants may optimize suitability for automotive or mobile environments.
Package
Lead-free Fine-pitch Ball Grid Array (LFBGA) package.
