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1.7V~1.95V 2Gbit 208MHz LPDDR SDRAM VFBGA-60(8x9) Memory (ICs) RoHS
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製造商微米
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製造商部分 #MT46H128M16LFDD-48 IT:C
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有存貨20144
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規格
| 屬性 | 價值 |
| Packaging | VFBGA-60(8x9) |
| Clock Frequency | 208MHz |
| Supply Current | 100mA |
| Memory Format | LPDDR SDRAM |
| Memory Size | 2Gbit |
| Operating Temperature | -40℃~+85℃ |
| Voltage - Supply | 1.7V~1.95V |
概述
Description
Key features include a clock speed of up to 200 MHz with data rates of 400 MT/s (megatransfers per second), which provides a balance between performance and power usage. It operates at a low voltage of 1.8V, making it suitable for battery-operated devices by minimizing power consumption. The "IT" designation refers to its industrial temperature range, allowing it to function effectively in environments ranging from -40°C to +85°C.
The "C" designation indicates a package code, typically related to chip packaging and physical form factor. Overall, the MT46H128M16LFDD-48 IT:C is designed to provide efficient memory solutions with optimal performance for mobile and portable electronic devices.
Equivalent
Features
1. Density and Organization: It offers a density of 2Gb, organized as 128M x 16 bits.
2. Speed: Operates at a data rate of up to 400 MT/s (megatransfers per second), with a clock frequency of 200 MHz.
3. Low Power: Designed for lower power consumption, suitable for mobile and battery-powered applications.
4. Temperature Range: Industrial temperature range from -40°C to +85°C, making it suitable for various environmental conditions.
5. Package Type: Available in a 60-ball VFBGA package, designed for compact and space-efficient applications.
6. Other Features: Supports features like auto temperature-compensated self-refresh, deep power down mode, and partial array self-refresh, which further enhance its power efficiency.
This combination of features makes it ideal for use in mobile devices, portable electronics, and other applications requiring efficient memory solutions with a balance of performance and power-saving capabilities.
Pinout
The key features and functions include:
- Pin Count: 60 balls
- Functionality: It is a DRAM chip used for high-performance, low-power applications, such as mobile devices. The chip is organized as 128 Meg x 16 bits, amounting to 2 Gigabits of memory.
- Data I/O (DQ): 16 data pins for read/write operations.
- Address Lines (A0-A13/BA0-BA1): Used to select memory rows and banks.
- Control Pins: Includes signals like CS# (Chip Select), RAS# (Row Address Strobe), CAS# (Column Address Strobe), WE# (Write Enable) to manage read/write operations.
- Clock (CLK) and Clock Enable (CKE): For synchronizing memory operations.
- Others: Some additional pins handle power supply (VDD, VDDQ), ground (VSS, VSSQ), and data masking (DM).
The MT46H128M16LFDD-48 IT:C is designed for efficient power management, making it ideal for battery-operated devices.