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MT41K256M8DA-125:K
+物料清單IC DRAM 2GBIT PARALLEL 78FBGA
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製造商美光科技股份有限公司。
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製造商部分 #MT41K256M8DA-125:K
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規格
| 屬性 | 價值 |
| Part Status | Active |
| Base Product Number | MT41K256M8 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-FBGA (8x10.5) |
| Packaging | Tray |
| Access Time | 13.75 ns |
概述
Description
Key specifications include a 1.5V power supply, ensuring efficient energy usage, and a CAS latency of 11 cycles which balances speed and stability. The chip is designed to support a range of applications from personal computers to servers and networking equipment, providing reliable performance with advanced error correction capabilities.
The ":K" in the part number denotes a specific revision or variant of the chip, which may have slight differences in performance or power consumption. Overall, the MT41K256M8DA-125:K offers a robust solution for systems requiring efficient and quick data handling.
Equivalent
1. Hynix H5TC4G63CFR-PBA
2. Samsung K4B4G1646D-BCK0
3. Kingston D2516EC4BXGGB
4. Nanya NT5CB256M8GN-DI
These equivalents offer similar specifications, such as memory size, speed, and voltage, making them suitable alternatives for DDR3L applications. Always verify compatibility with your specific system requirements.
Features
1. Density and Organization: It offers a density of 2 Gb, organized as 256 Meg x 8 bits.
2. Speed and Timing: It operates with a clock speed of up to 1600 MT/s (million transfers per second) and has a CAS latency (CL) of 11 cycles.
3. Voltage: The chip functions at a power supply voltage of 1.35V (DDR3L) or 1.5V (standard DDR3), providing flexibility for power-sensitive applications.
4. Package: It comes in a 78-ball FBGA package, which is compact and suitable for high-density applications.
5. Features: Includes features like on-die termination (ODT), a fly-by topology for command and address signals, and an asynchronous reset pin.
6. Applications: Designed for use in a variety of applications, such as personal computers, servers, and other electronic devices requiring high-speed data processing.
These features make it suitable for efficient, high-performance memory solutions in various technological applications.
Pinout
Key functions of this DDR3 SDRAM include:
1. High-speed data transfer: Operates at a clock frequency of 800 MHz to 1600 MHz, supporting data rates of 1600 MT/s (megatransfers per second).
2. Memory addressing: Provides a large memory addressing capability, supporting a wide range of applications from consumer electronics to computing systems.
3. Low power consumption: Features advanced power-saving modes, such as a self-refresh and power-down modes, which help reduce overall power usage.
4. Reliability features: Includes mechanisms like fly-by topology and on-die termination (ODT) to enhance signal integrity and overall system reliability.
This component is widely used in applications requiring high bandwidth, high density, and low power memory solutions.
Manufacturer
Founded in 1978 and headquartered in Boise, Idaho, Micron has developed a reputation for innovation in the semiconductor industry. Their products are utilized in various applications, including data centers, personal computing, and consumer electronics, as well as in industrial and automotive markets. Micron's extensive research and development efforts have positioned it as a key player in advancing memory technology to meet the increasing demands for performance, efficiency, and capacity in modern electronic systems.
Application
1. Computing Devices: Used in desktops, laptops, and servers for efficient multitasking and data handling.
2. Networking Equipment: Supports routers and switches requiring fast data processing.
3. Consumer Electronics: Integrated into gaming consoles, smart TVs, and set-top boxes for enhanced performance.
4. Industrial Systems: Employed in automation and control systems for reliable operation.
5. Telecommunications: Facilitates high-speed data transfer in telecommunications infrastructure.
These applications leverage the chip's high bandwidth and low latency features for improved system performance.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of the MT41K256M8DA-125:K?
A: It has a 2Gbit density organized as 256M x 8, suitable for applications requiring high-density parallel DRAM.
Q: What voltage supply does this DDR3L SDRAM require?
A: It operates from 1.283V to 1.45V, making it compatible with low-voltage DDR3L designs for power efficiency.
Q: What is the maximum clock frequency for this component?
A: The device supports a clock frequency of 800 MHz, enabling high-speed data transfer for computing and embedded systems.
Q: What is the access time for the MT41K256M8DA-125:K?
A: It features an access time of 13.75 ns, ensuring quick read/write cycles for time-sensitive applications.
Q: What package type does this DRAM use?
A: It is housed in a 78-TFBGA package (78-FBGA, 8x10.5mm), designed for surface mount assembly in space-constrained designs.
Q: What is the operating temperature range of this device?
A: It operates from 0°C to 95°C (TC), making it suitable for commercial and industrial environments with moderate thermal conditions.
Q: Is this memory volatile or non-volatile?
A: It is volatile DRAM, meaning data must be refreshed periodically and is lost when power is removed.